2,8-dihexylanthra[2,3-b:6,7-b']dithiophene

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 2,8-dihexylanthra[2,3-b:6,7-b']dithiophene
• 英文别名: 7,17-Dihexyl-6,16-dithiapentacyclo[11.7.0.03,11.05,9.015,19]icosa-1,3,5(9),7,10,12,14,17,19-nonaene
• 化学式: C₃₀H₃₄S₂
• 分子量: 458.732
• InChiKey: GTDNJKOLIYRXFO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  11.5
• 重原子数：
  32
• 可旋转键数：
  10
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  56.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,8-dihexylanthra[2,3-b:6,7-b']dithiophene 在 N-溴代丁二酰亚胺(NBS) 作用下， 反应 1.0h， 以95%的产率得到5,11-dibromo-2,8-dihexylanthra[2,3-b:6,7-b']dithiophene
  参考文献：
  名称：

  异构体纯的5,11-二溴-蒽噻吩的环戊烷化和环脱氢反应导致芳族化合物的变形†

  摘要：

  制备了异构的纯5,11-二溴-2,8-二己基噻吩[2,3- b：76- b ']二噻吩，一种溴化的蒽二噻吩（ADT）类似物，并用于钯催化的3,3环戊环化反应′-二甲氧基-苯基乙炔，得到环戊环化的ADT（CP-ADTs）。进一步的Scholl环脱氢反应得到扭曲的芳烃，其具有大张角，低光学间隙和低LUMO。

  DOI：

  10.1039/c8cc07327a
• 作为产物：
  描述：

  2,8-dihexylanthra[2,3-b:6,7-b']dithiophene-5,11-dione 在 lithium aluminium tetrahydride 、 盐酸 作用下， 以 四氢呋喃 、 水 为溶剂， 反应 3.5h， 以30%的产率得到2,8-dihexylanthra[2,3-b:6,7-b']dithiophene
  参考文献：
  名称：

  异构纯的抗蒽噻吩衍生物的合成

  摘要：

  描述了2,8-二烷基蒽噻吩的反异构体的区域特异性全合成和表征。通过13 C NMR以及单晶X射线衍射证明了ADT衍生物的“抗”结构。

  DOI：

  10.1021/ol202089t

文献信息

• ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
  申请人：Fujifilm Corporation

  公开号：EP3116031A1

  公开（公告）日：2017-01-11

  Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

  提供了一种有机薄膜晶体管，包括基板上的栅电极、有机半导体层、栅绝缘层、源电极和漏电极，其中有机半导体层包括有机半导体和树脂 (C)，树脂 (C)具有一个或多个基团，这些基团选自具有氟原子的基团、具有硅原子的基团组成的组、具有一个或多个碳原子的烷基，或在形成烷氧基羰基、环烷基、芳烷基、芳氧基羰基、被至少一个烷基取代的芳环基和被至少一个环烷基取代的芳环基的情况下具有两个或多个碳原子的烷基；一种制造有机薄膜晶体管的方法，包括涂敷含有有机半导体和树脂（C）的涂层溶液，并使树脂（C）不均匀分布。
• SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
  申请人：Fujifilm Corporation

  公开号：EP3142160A1

  公开（公告）日：2017-03-15

  A semiconductor element which comprises a semiconductor layer and an insulating layer that is adjacent to the semiconductor layer, and wherein the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by general formula (IA) and a repeating unit (IB) represented by general formula (IB); and an insulating layer-forming composition for forming an insulating layer of a semiconductor element, which contains a polymer compound that has the repeating structures (IA) and (IB). (In general formulae, each of R1a and R1b independently represents a hydrogen atom, a halogen atom or an alkyl group; each of L1a, L2a and L1b independently represents a single bond or a linking group; X represents a crosslinkable group; YB represents a decomposable group or a hydrogen atom; each of m1a and m2a independently represents an integer of 1-5; and each * represents a bonding position of the repeating units.)

  一种半导体元件，它包括半导体层和与半导体层相邻的绝缘层，其中绝缘层由具有通式(IA)代表的重复单元(IA)和通式(IB)代表的重复单元(IB)的聚合物化合物的交联产物形成；以及一种用于形成半导体元件绝缘层的绝缘层形成组合物，它含有具有重复结构(IA)和(IB)的聚合物化合物。(通式中，R1a和R1b各自独立地代表氢原子、卤原子或烷基；L1a、L2a和L1b各自独立地代表单键或连接基团；X代表可交联基团；YB代表可分解基团或氢原子；m1a和m2a各自独立地代表1-5的整数；每个*代表重复单元的键合位置)。
• Organic thin-film transistor and method for manufacturing same
  申请人：FUJIFILM Corporation

  公开号：US10008671B2

  公开（公告）日：2018-06-26

  Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, and a source electrode and a drain electrode on a substrate, in which the organic semiconductor layer contains an organic semiconductor and a block copolymer, and the block copolymer is at least one selected from specific block copolymers such as a styrene-(meth)acrylate ester block copolymer and may be phase-separated, and a method for manufacturing an organic thin-film transistor, which includes an organic semiconductor containing a phase-separated block copolymer, including: applying a coating solution which contains an organic semiconductor and a block copolymer for film formation; and heating the obtained film so that the block copolymer is self-assembled.

  提供了一种有机薄膜晶体管，包括：栅极、有机半导体层、栅极绝缘层以及基底上的源电极和漏电极，其中有机半导体层包含有机半导体和嵌段共聚物，嵌段共聚物至少是选自特定嵌段共聚物（如苯乙烯-（甲基）丙烯酸酯嵌段共聚物）中的一种，并且可以是相分离的；以及一种制造有机薄膜晶体管的方法，其中包括含有相分离嵌段共聚物的有机半导体，包括： 1：涂敷含有有机半导体和嵌段共聚物的涂层溶液，以形成薄膜；以及加热获得的薄膜，使嵌段共聚物自组装。
• Synthesis, Morphology, and Field-Effect Mobility of Anthradithiophenes
  作者：Joyce G. Laquindanum、Howard E. Katz、Andrew J. Lovinger

  DOI：10.1021/ja9728381

  日期：1998.2.1

  The synthesis. thin-film morphology, and hole mobility in thin-film transistors (TFTs) of compounds based on the novel anthradithiophene (ADT) ring system are reported. The parent compound and its 2,8-dihexyl, didodecyl, and dioctadecyl derivatives (DHADT, DDADT, and DOADT, respectively), synthesized via alkylated thiophene dicarboxaldehyde acetals, were investigated. They all form highly ordered polycrystalline vacuum-evaporated films with mobilities as high as 0.15 cm(2)/(V s), as high as has ever been observed for a polycrystalline organic material. DOADT has a mobility of 0.06 cm(2)/(V s) even though 70% of its molecular volume is occupied by hydrocarbon chains. DHADT was cast from solution under atmospheric conditions onto a TFT giving a mobility of 0.01-0.02 cm(2)/(V s), Thus, the alkylated ADTs combine a pentacene-like intrinsic mobility with greater solubility and oxidative stability.
• Organic field effect transistor and semiconductor device
  申请人：Furukawa Shinobu

  公开号：US20080099757A1

  公开（公告）日：2008-05-01

  It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.