An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. A
1
and A
2
represent S, O or Se; at least one of R
1
to R
6
represents a substituent represented by *-L-R wherein L represents a divalent linking group and R represents a hydrogen atom, an alkyl group, an oligooxyethylene group, an oligosiloxane group or a trialkylsilyl group.