An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. A
1
and A
2
represent S, O or Se; at least one of R
1
to R
6
represents a substituent represented by *-L-R wherein L represents a divalent linking group and R represents a hydrogen atom, an alkyl group, an oligooxyethylene group, an oligosiloxane group or a trialkylsilyl group.
US9899605B2
申请人:——
公开号:US9899605B2
公开(公告)日:2018-02-20
Zambounis, John S.; Christen, Edgar; Pfeiffer, Jürgen, Journal of the American Chemical Society, 1994, vol. 116, # 3, p. 925 - 931
作者:Zambounis, John S.、Christen, Edgar、Pfeiffer, Jürgen、Rihs, Grety