(9,9'-spirobifluorene-2-yl)triphenylsilane

• 分子结构分类: 有机化合物 - 苯类化合物 - 芴
• 英文名称: (9,9'-spirobifluorene-2-yl)triphenylsilane
• 英文别名: triphenyl-9,9-spirobifluoren-2-yl silane；2-triphenylsilyl-9,9'-spirobifluorene；Triphenyl(9,9'-spirobi[fluorene]-2-yl)silane
• 化学式: C₄₃H₃₀Si
• 分子量: 574.797
• InChiKey: NFQWPEXTGGYIPE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.41
• 重原子数：
  44
• 可旋转键数：
  4
• 环数：
  9.0
• sp3杂化的碳原子比例：
  0.02
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  2-溴-9,9'-螺二芴 在 正丁基锂 作用下， 以 四氢呋喃 、 正己烷 为溶剂， 反应 1.0h， 生成 (9,9'-spirobifluorene-2-yl)triphenylsilane
  参考文献：
  名称：

  三苯基甲基和三苯基甲硅烷基螺二芴基主体的比较：磷光有机发光二极管的合成、光物理和性能

  摘要：

  本研究介绍了两种被三苯基甲基 (SB-C) 或三苯基甲硅烷基 (SB-Si) 部分取代的螺二芴基衍生物的合成和表征，用作磷光有机发光二极管 (PHOLED) 的主体材料。两种分子都具有相似的高三重态能量和大的能隙。使用这些材料作为主体制造了蓝色 Ir(tpz)3 和绿色 Ir(ppy)3 磷光器件。令人惊讶的是，尽管 SB-Si 的价轨道能量相似，但与 SB-C 相比，SB-Si 表现出了更优异的电荷传输能力。特别是，SB-Si 被证明是蓝色和绿色器件的高效主体，Ir(tpz)3 器件的最大效率为 12.6%，Ir(ppy)3 器件的最大效率为 9.6%。

  DOI：

  10.3390/molecules28135241

文献信息

• Triphenylsilane-Fluorene Hybrids as Host Materials for Green and Blue Phosphorescent Organic Light Emitting Diodes
  作者：Sujin Jeong、Seokwon Cho、Ho Won Lee、Young Kwan Kim、Seung Soo Yoon

  DOI：10.1166/jnn.2017.14113

  日期：2017.8.1

  Three triphenylsilane-fluorene hybrids as host materials have been synthesized and characterized for phosphorescent organic light emitting diodes (OLEDs). Triphenylsilane and fluorene moieties are introduced to increase thermal stability and triplet energy. Two kinds of devices—green and blue phosphorescent OLEDs—were fabricated to investigate electroluminescent properties of triphenylsilane-fluorene hybrids as host materials. Devices using these materials as phosphorescent hosts showed efficient green as well as blue electroluminescence with the maximum external quantum efficiencies of 9.01 and 10.7%, respectively.

  三苯基硅烷-芴杂化物作为主体材料已被合成并表征用于磷光有机发光二极管（OLED）。引入三苯基硅烷和芴基团以提高热稳定性和三重态能量。制备了两类器件——绿色和蓝色磷光OLED——以研究三苯基硅烷-芴杂化物作为主体材料的电致发光性能。使用这些材料作为磷光主体的器件显示了高效的绿色和蓝色电致发光，最大外部量子效率分别为9.01%和10.7%。
• Highly Efficient Phosphorescent Green Organic Light-Emitting Diodes with High Energy Gap Host Materials
  作者：Hoe Min Kim、Ji Hyun Seo、Kum Hee Lee、Hyun Ju Kang、Seung Soo Yoon、Young Kwan Kim

  DOI：10.1080/15421406.2010.495912

  日期：2010.10.11

  We investigated the electroluminescent characteristics of three devices which were fabricated with a green phosphorescent emitter bis[2-(o-terphen-3-yl)pyridinato-C,N] iridium(III) (acetylacetonate) [(tppy)(2)Ir(acac)] doped in triphenylsilane-based host materials, such as 4,4'-bis(triphenylsilyl) biphenyl (BSB), 9,9'-spirobifluorene-2-yltriphenylsilane (SFS) and (4-(10-(naphthalene-2-yl)anthracen-9-yl)phenyl)-triphenylsilane (ANPTPS), which have the different the triplet energy levels (ET) of 2.61 eV, 2.64 eV and <1.91 eV, respectively. Among those, two devices using BSB and SFS hosts with the suitable ET energy levels to green phosphorescent dopant exhibited the highly efficient green electrophosphorescence with the maximum luminous efficiencies of 51.3 cd/A and 46.6 cd/A, respectively, and the maximum quantum efficiencies of 13.9% and 12.4%, respectively.