Provided are ionic thermal acid generators of the following general formula (I):
wherein: Ar1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.
本文提供了以下通式(I)的离子热酸发生器:
其中Ar1 代表任选取代的碳环或杂环芳香基团; W 独立地代表选自羧基、羟基、硝基、
氰基、C1-5 烷氧基和甲酰基的基团; X 是阳离子; Y 独立地代表连接基团;Z 独立地代表选自羟基、
氟化醇、酯、任选取代的烷基、C5 或更高任选取代的单环、多环、融合多环环脂族或芳基的基团,其中可任选包含一个杂原子,条件是 Z 中至少有一个是羟基;a 是 0 或更大的整数;b 是 1 或更大的整数;条件是 a+b 至少为 1,且不大于芳香基团可用芳香碳原子的总数。此外,还提供了光刻胶图案修整组合物和使用修整组合物修整光刻胶图案的方法。这些热酸发生器、组合物和方法特别适用于半导体器件的制造。