1-甲基-1`-十四烷基-4,4`-二吡啶二氯化物

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吡啶及其衍生物
• 中文名称: 1-甲基-1`-十四烷基-4,4`-二吡啶二氯化物
• 英文名称: 1-methyl-4-(1-tetradecylpyridin-1-ium-4-yl)pyridin-1-ium;dichloride
• 化学式: C25H40Cl2N2
• 分子量: 439.5
• InChiKey: QWMLZPBYZVAWPG-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  0.17
• 重原子数：
  29
• 可旋转键数：
  14
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.6
• 拓扑面积：
  7.8
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
  申请人：Entegris, Inc.

  公开号：US10138117B2

  公开（公告）日：2018-11-27

  Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.

  用于从微电子设备上选择性去除氮化钛和/或光刻胶蚀刻残留材料（相对于金属导电材料（如钨）和绝缘材料）的组合物。移除组合物的 pH 值较低，含有至少一种氧化剂和至少一种蚀刻剂，以及可将金属侵蚀降至最低的腐蚀抑制剂和可保护介电材料的钝化剂。
• Compositions and methods for selectively etching titanium nitride
  申请人：ENTEGRIS, INC.

  公开号：US10392560B2

  公开（公告）日：2019-08-27

  Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

  用于从微电子设备上选择性去除氮化钛和/或光刻胶蚀刻残留材料（相对于金属导电材料（如钨）和绝缘材料）的组合物。清除组合物至少含有一种氧化剂和一种蚀刻剂，还可能含有各种腐蚀抑制剂，以确保选择性。
• Post CMP cleaning compositions for ceria particles
  申请人：ENTEGRIS, INC.

  公开号：US11085011B2

  公开（公告）日：2021-08-10

  The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.

  本发明提供了一种清除化学机械抛光（CMP）后污染物和铈微粒的组合物和工艺。该组合物能高效去除微电子设备表面的铈颗粒和 CMP 副产品污染物。
• Post CMP cleaning composition
  申请人：ENTEGRIS, INC.

  公开号：US11124746B2

  公开（公告）日：2021-09-21

  The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.

  本公开内容一般涉及一种组合物和工艺，用于清洗微电子设备上的残留物和/或污染物。残留物可包括 CMP 后、蚀刻后和/或冲洗后残留物。本发明的组合物和方法在清洁由铜、低介电材料和至少一种含钽材料、含钴材料、含钽材料、含钨材料和含钌材料组成的阻挡层材料构成的微电子表面时特别有利。
• Ceria removal compositions
  申请人：ENTEGRIS, INC.

  公开号：US11124741B2

  公开（公告）日：2021-09-21

  The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

  本发明一般涉及一种清除组合物和工艺，特别适用于清除微电子设备上的铈颗粒和 CMP 污染物，尤其是具有 PETEOS、氮化硅和聚硅基板的微电子设备。一方面，本发明提供了利用不含硫和磷原子的络合剂对含有铈颗粒的微电子基板进行处理的方法。