2,2'-[(1H-苯并三唑-1-基甲基)亚氨基]二乙醇 | 61691-97-2

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并三唑类
• 中文名称: 2,2'-[(1H-苯并三唑-1-基甲基)亚氨基]二乙醇
• 英文名称: 2,2'-(benzotriazol-1-ylmethyl-azanediyl)-bis-ethanol
• 英文别名: 2,2'-[(1H-benzotriazol-1-ylmethyl)imino]bisethanol；Ethanol, 2,2'-[(1H-benzotriazol-1-ylmethyl)imino]bis-；2-[benzotriazol-1-ylmethyl(2-hydroxyethyl)amino]ethanol
• CAS: 61691-97-2
• 化学式: C₁₁H₁₆N₄O₂
• 分子量: 236.274
• InChiKey: WKZLYSXRFUGBPI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0
• 重原子数：
  17
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  74.4
• 氢给体数：
  2
• 氢受体数：
  5

安全信息

• 海关编码：
  2933990090

文献信息

• Polishing composition
  申请人：FUJIMI INCORPORATED

  公开号：EP1520892A2

  公开（公告）日：2005-04-06

  A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

  本发明的一种抛光组合物用于半导体器件中形成布线的抛光，包括：特定的表面活性剂；氧化硅；从羧酸和α-氨基酸组成的组中选出的至少一种；腐蚀抑制剂；氧化剂；以及水。这种抛光组合物能够抑制分层现象的发生。
• Polishing composition and process for producing wiring structure using it
  申请人：FUJIMI INCORPORATED

  公开号：EP1640424A1

  公开（公告）日：2006-03-29

  A polishing composition comprising the following components (a) to (e): (a) silicon dioxide, (b) an alkaline compound, (c) an anticorrosive, (d) a water soluble polymer compound, and (e) water.

  一种抛光组合物，包括以下成分(a)至(e)： (a) 二氧化硅 (b) 鹼性化合物 (c) 一种防腐剂 (d) 一种水溶性聚合物化合物，和 (e) 水。
• POLISHING COMPOSITION AND POLISHING METHOD
  申请人：FUJIMI INCORPORATED

  公开号：EP1670047A1

  公开（公告）日：2006-06-14

  A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer (15) positioned outside a trench (13). A second polishing composition is used in chemical mechanical polishing for removing the remaining part of the portion of a conductive layer positioned outside the trench and the portion of a barrier layer (14) positioned outside the trench. The first polishing composition contains a specific surfactant, a silicon oxide, a carboxylic acid, an anticorrosive, an oxidizing agent, and water. The second polishing composition contains colloidal silica, an acid, an anticorrosive, and a completely saponified polyvinyl alcohol.

  第一种抛光组合物用于化学机械抛光，以去除位于沟槽 (13) 外侧的导电层 (15) 的一部分。 第二种抛光组合物用于化学机械抛光，以去除位于沟槽外的导电层部分的剩余部分和位于沟槽外的阻挡层 (14) 部分。 第一种抛光组合物含有特定的表面活性剂、氧化硅、羧酸、防腐剂、氧化剂和水。 第二种抛光组合物含有胶体二氧化硅、酸、防腐剂和完全皂化的聚乙烯醇。
• Polishing liquid for barrier layer
  申请人：Fujifilm Corporation

  公开号：EP1813658A2

  公开（公告）日：2007-08-01

  According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including colloidal silica covered at a portion of a surface thereof with aluminum, and an oxidizing agent, wherein the polishing liquid has a pH of from 2 to 7.

  根据本发明的一个方面，提供了一种用于抛光半导体集成电路阻挡层的抛光液，抛光液包括在其部分表面用铝覆盖的胶体二氧化硅和氧化剂，其中抛光液的 pH 值为 2 至 7。
• Cleaning composition, cleaning process, and process for producing semiconductor device
  申请人：FUJIFILM Corporation

  公开号：EP2305788A1

  公开（公告）日：2011-04-06

  A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

  本发明提供了一种用于清除等离子体蚀刻残留物和/或在半导体基板上形成的灰化残留物的清洁组合物，该组合物包括（a 组分）水、（b 组分）羟胺和/或其盐、（c 组分）碱性有机化合物和（d 组分）有机酸，其 pH 值为 7 至 9。此外，还提供了一种清洗工艺和一种使用该清洗组合物生产半导体器件的工艺。