COMPOSITION CONTAINING HYDROXYLATED CONDENSATION RESIN FOR FORMING FILM UNDER RESIST
申请人:Nissan Chemical Industries, Ltd.
公开号:EP2042927A1
公开(公告)日:2009-04-01
Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1):
(where Y represents a C1-10 alkylene group or a C6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.
本发明公开了一种用于形成抗蚀剂底层膜的平版印刷组合物,该组合物可在制造半导体设备的平版印刷工艺中用作下层抗反射膜,通过该膜可以抑制照射在形成于半导体衬底上的光刻胶上的曝光光从衬底上反射出去;还可用作用于将表面凹凸不平的半导体衬底压平的平版印刷膜,以填充形成于半导体衬底上的孔洞;还可用作防止光刻胶在加热/燃烧过程中被半导体衬底产生的物质污染的膜等。用于形成抗蚀剂底层的平版印刷组合物包括具有式(1)结构的聚合物:
(其中 Y 代表 C1-10 亚烷基或 C6-14 芳环,条件是亚烷基和芳环具有一个或多个羟基,其数目不大于亚烷基和芳环的可取代氢原子数);以及溶剂。