The invention relates to the preparation of chiral compounds, in particular to the preparation of chiral compounds which may be used as intermediates for the preparation of anti-diabetic agents, preferably sitagliptin.
Attrition‐Enhanced Deracemization of the Antimalaria Drug Mefloquine
作者:Anthonius H. J. Engwerda、Rick Maassen、Paul Tinnemans、Hugo Meekes、Floris P. J. T. Rutjes、Elias Vlieg
DOI:10.1002/anie.201811289
日期:2019.2.4
Mefloquine is an important drug for prevention and treatment of malaria. It is commercially available as a racemic mixture, wherein only one enantiomer is active against malaria, while the other one causes severe psychotropic effects. By converting the drug into a compound that crystallizes as a racemizable racemic conglomerate, the deracemization of mefloquine into the desired enantiomer was achieved
[EN] PREPARATION OF SITAGLIPTIN INTERMEDIATES<br/>[FR] PRÉPARATION D'INTERMÉDIAIRES DE SITAGLIPTINE
申请人:LEK PHARMACEUTICALS
公开号:WO2012163815A1
公开(公告)日:2012-12-06
The invention relates to the preparation of chiral compounds, in particular to the preparation of chiral compounds which may be used as intermediates for the preparation of anti-diabetic agents, preferably sitagliptin.
The invention relates to the preparation of chiral compounds, in particular to the preparation of chiral compounds which may be used as intermediates for the preparation of anti-diabetic agents, preferably sitagliptin.
CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
申请人:Carter K. Melvin
公开号:US20050090109A1
公开(公告)日:2005-04-28
The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly relates to a method of polishing substrates comprising copper, tungsten, titanium, and/or polysilicon using a chemical-mechanical polishing system comprising organosulfonic acids having an electrochemical oxidation potential greater than 0.2V as an oxidizer.