2,6-联苯撑二羧酸 | 65330-85-0

• 分子结构分类: 有机化合物 - 苯类化合物
• 中文名称: 2,6-联苯撑二羧酸
• 英文名称: Biphenylene-2,6-dicarboxylic acid
• CAS: 65330-85-0
• 化学式: C₁₄H₈O₄
• 分子量: 240.21
• InChiKey: CYISDYQPECMUKK-UHFFFAOYSA-N

物化性质

• 熔点：
  350

计算性质

• 辛醇/水分配系数(LogP)：
  0.8
• 重原子数：
  18
• 可旋转键数：
  2
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  74.6
• 氢给体数：
  2
• 氢受体数：
  4

文献信息

• MODIFIER FOR AROMATIC POLYESTER AND AROMATIC POLYESTER RESIN COMPOSITION COMPRISING THE SAME
  申请人：TABATA Masayoshi

  公开号：US20110224343A1

  公开（公告）日：2011-09-15

  The present invention provides a modifier for aromatic polyesters which enhances the melt fluidity of aromatic polyesters without a significant decrease in the heat resistance of the aromatic polyesters, and an aromatic polyester resin composition including the modifier for aromatic polyesters. The present invention relates to a modifier for aromatic polyesters comprising polyhydric phenol residues and residues of aromatic polycarboxylic acid, acid halide or acid anhydride thereof, and the modifier comprises a material having a structure composed of a first residue selected from the group consisting of divalent residues represented by Formula (I): —Ar—W 1 x —Ar— and by Formula (II): —Ar—, the first residues being bonded to two identical or different second residues selected from the group consisting of monovalent residues represented by Formula (III): and monovalent residues represented by Formula (IV): —O—C(O)—R 7 —.

  本发明提供了一种用于芳香族聚酯的改性剂，可以增强芳香族聚酯的熔融流动性，而不明显降低芳香族聚酯的耐热性，以及包括该改性剂的芳香族聚酯树脂组合物。本发明涉及一种用于芳香族聚酯的改性剂，包括多羟基酚残基和芳香族多羧酸、酸卤或其酸酐残基，该改性剂包括具有以下结构的材料：第一残基，选择自由式(I)所代表的二价残基：—Ar—W1x—Ar—和自由式(II)所代表的：—Ar—，第一残基与选择自由式(III)所代表的单价残基：和自由式(IV)所代表的单价残基：—O—C(O)—R7—的两个相同或不同的第二残基结合。
• Precursor of a heat resistant resin, heat resistant resin, insulating film and semiconductor device
  申请人：——

  公开号：US20020013443A1

  公开（公告）日：2002-01-31

  A precursor of a polybenzoxazole resin which comprises a crosslinking group in a molecule and has a specific structure, a polybenzoxazole resin obtained from the precursor by the condensation reaction and the crosslinking reaction, an insulating film comprising the polybenzoxazole resin and a semiconductor device comprising an insulating interlayer film in multi-layer wiring or a film for protecting surfaces which comprises the above insulating film. The precursor exhibits excellent processability due to excellent solubility in solvents and, after the ring closure, excellent heat stability in applications. The resin exhibits excellent electric, physical and mechanical properties and is advantageously used for insulating interlayer films of semiconductor devices and the like applications.

  一种聚苯并咪唑树脂的前体，其分子中包含交联基团并具有特定的结构，通过缩合反应和交联反应获得的聚苯并咪唑树脂，包括聚苯并咪唑树脂的绝缘膜以及包括上述绝缘膜的多层布线中的绝缘中间层膜或用于保护表面的膜的半导体器件。由于前体在溶剂中具有优异的溶解性，因此表现出优异的加工性能，并且在环闭后具有优异的热稳定性能，树脂表现出优异的电学、物理和机械性能，可优点地用于半导体器件的绝缘中间层膜等应用。
• Material for an insulating film, coating varnish for an insulating film, and insulating film and semiconductor device using the same
  申请人：——

  公开号：US20040002572A1

  公开（公告）日：2004-01-01

  A material for an insulating film which comprises a copolymer obtained by reacting a polyamide having a specific structure and a reactive oligomer as a component forming the film; a coating varnish for an insulating film which comprises this material and an organic solvent; an insulating film which comprises a layer of a resin comprising as a main structure a polybenzoxazole which is obtained by treating the above material or the above coating varnish by heating so that condensation reaction and crosslinking reaction take place and has fine pores; and a semiconductor device which comprises an insulating interlayer film for multi-layer wiring comprising the insulating film and/or a surface protective film comprising the insulating film. Excellent electrical, thermal and mechanical properties are exhibited and a low permittivity can be achieved.

  一种绝缘薄膜材料，包括由特定结构的聚酰胺和反应性低聚物作为成膜组分所反应得到的共聚物；一种用于绝缘薄膜的涂覆清漆，包括该材料和有机溶剂；一种绝缘薄膜，包括一层树脂，其主要结构为通过热处理上述材料或上述涂覆清漆得到的聚苯并咪唑，发生缩聚反应和交联反应并具有细小孔隙；以及一种半导体器件，包括用于多层布线的绝缘中间层膜，包括上述绝缘薄膜和/或表面保护膜，包括上述绝缘薄膜。具有优异的电性能、热性能和机械性能，并且可以实现低介电常数。
• HEAT-RESISTANT RESIN PRECURSOR, HEAT-RESISTANT RESIN AND INSULATING FILM AND SEMICONDUCTOR DEVICE
  申请人：SUMITOMO BAKELITE CO., LTD.

  公开号：EP1327653A1

  公开（公告）日：2003-07-16

  A precursor of a polybenzoxazole resin which comprises a crosslinking group in a molecule and has a specific structure, a polybenzoxazole resin obtained from the precursor by the condensation reaction and the crosslinking reaction, an insulating film comprising the polybenzoxazole resin and a semiconductor device comprising an insulating interlayer film in multi-layer wiring or a film for protecting surfaces which comprises the above insulating film. The precursor exhibits excellent processability due to excellent solubility in solvents and, after the ring closure, excellent heat stability in applications. The resin exhibits excellent electric, physical and mechanical properties and is advantageously used for insulating interlayer films of semiconductor devices and the like applications.

  一种在分子中含有交联基团并具有特定结构的聚苯并恶唑树脂前体，一种由该前体通过缩合反应和交联反应得到的聚苯并恶唑树脂，一种由该聚苯并恶唑树脂组成的绝缘膜，以及一种由多层布线中的绝缘夹层膜或由上述绝缘膜组成的表面保护膜组成的半导体器件。前体在溶剂中具有极佳的溶解性，因此具有极佳的加工性，并且在闭环后具有极佳的热稳定性。该树脂具有优异的电气、物理和机械性能，可用于半导体设备的绝缘夹层薄膜和类似用途。
• AROMATIC POLYESTER
  申请人：Muroran Institute of Technology

  公开号：EP2479203A1

  公开（公告）日：2012-07-25

  The present invention provides an aromatic polyester which is substantially free from the occurrence of coloration and retains significantly high transparency even after being thermally processed at high temperature and which has high flowability. The aromatic polyester contains a polyhydric phenol residue and a residue of any one of aromatic polycarboxylic acid, halide thereof, and anhydride thereof, and terminals of the aromatic polyester have a structure represented by the formula -C(O)-R. The aromatic polyester has an end-capping rate of 90% or higher and a weight average molecular weight (Mw) ranging from 3,000 to 1,000,000.

  本发明提供了一种芳香族聚酯，该聚酯基本上不会发生着色，即使在高温热加工后仍能保持明显的高透明度，并且具有高流动性。芳香族聚酯含有多羟基苯酚残留物和芳香族多羧酸、其卤化物和其酸酐中任意一种的残留物，芳香族聚酯的端基具有式 -C(O)-R 所代表的结构。芳香族聚酯的端盖率为 90% 或更高，重量平均分子量（Mw）为 3,000 至 1,000,000 之间。