Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method
申请人:JSR CORPORATION
公开号:US11243468B2
公开(公告)日:2022-02-08
A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R1 and R2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R1 and R2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R1 and R2 bond.
一种用于形成抗蚀剂底层薄膜的组合物包含:具有下式(1)所代表的部分结构的化合物;以及溶剂。在式 (1) 中X 代表由式(i)、(ii)、(iii)或(iv)表示的基团。在式 (i) 中R1 和 R2 各自独立地代表氢原子、具有 1 至 20 个碳原子的取代或未取代的一价脂 族烃基或具有 7 至 20 个碳原子的取代或未取代的芳烷基,条件是 R1 和 R2 中至少 有一个代表具有 1 至 20 个碳原子的取代或未取代的一价脂族烃基或具有 7 至 20 个碳原子 的取代或未取代的芳烷基;或 R1 和 R2 合在一起代表具有 3 至 20 个环原子的环状结构的一部分,以及 R1 和 R2 键合的碳原子。