Cyclohydrocarbonylation of substituted alkynes and tandem cyclohydrocarbonylation–CO insertion of α-keto alkynes catalyzed by immobilized Co–Rh heterobimetallic nanoparticles
COMPOSITION FOR RESIST UNDERLAYER FILM, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND FULLERENE DERIVATIVE
申请人:WATANABE Takeru
公开号:US20120045900A1
公开(公告)日:2012-02-23
The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.
US9076738B2
申请人:——
公开号:US9076738B2
公开(公告)日:2015-07-07
Cyclohydrocarbonylation of substituted alkynes and tandem cyclohydrocarbonylation–CO insertion of α-keto alkynes catalyzed by immobilized Co–Rh heterobimetallic nanoparticles
作者:Kang Hyun Park、So Yeon Kim、Young Keun Chung
DOI:10.1039/b416657d
日期:——
The use of cobaltârhodium (Co2Rh2) heterobimetallic nanoparticles in the cyclohydrocarbonylation of substituted alkynes and tandem cyclohydrocarbonylationâCO insertion of α-keto alkynes to give 2(3H)- or 2(5H)-furanones is described.