N-n-hexyl-N'-dodecylthiourea | 62552-48-1

• 分子结构分类: 有机化合物 - 有机硫化合物 - 硫脲类
• 英文名称: N-n-hexyl-N'-dodecylthiourea
• 英文别名: 1-n-Dodecyl-3-n-hexyl-2-thioharnstoff；1-n-dodecyl-3-n-hexyl-2-thiourea；N-Dodecyl-N'-hexylthiourea；1-dodecyl-3-hexylthiourea
• CAS: 62552-48-1
• 化学式: C₁₉H₄₀N₂S
• 分子量: 328.606
• InChiKey: IKRUSPOTQBTILL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.9
• 重原子数：
  22
• 可旋转键数：
  16
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.95
• 拓扑面积：
  56.2
• 氢给体数：
  2
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  N-n-hexyl-N'-dodecylthiourea 、 lead(II) oleate 以 二苯醚 、 正十六烷 为溶剂， 生成 lead(II) sulfide
  参考文献：
  名称：

  Use of sulfur and selenium compounds as precursors to nanostructured materials

  摘要：

  目前公开的主题提供了制备纳米晶体的过程，包括制备核壳纳米晶体的过程。目前公开的主题还提供硫和硒化合物作为纳米结构材料的前体。目前公开的主题还提供具有特定粒径分布的纳米晶体。

  公开号：

  US10253256B2
• 作为产物：
  描述：

  十二烷基伯胺 、 异硫氰酸己酯 以 甲苯 为溶剂， 生成 N-n-hexyl-N'-dodecylthiourea
  参考文献：
  名称：

  A tunable library of substituted thiourea precursors to metal sulfide nanocrystals

  摘要：

  制造质量胜过质量控制 对于半导体纳米晶体，需要对粒子尺寸进行严格控制，以获得具有均匀性能的粒子。然而，后合成纯化方法可能会很困难且昂贵。Hendricks等人提出了一类硫脲替代物作为硒烯前体的家族（见Hens的观点）。反应速率与前体的特定化学性质相关，这使得可以合成金属硒化物纳米晶体，例如PbS，具有特定尺寸、窄尺寸分布和反应物的完全转化。 《科学》本期p. 1226；另见p. 1211

  DOI：

  10.1126/science.aaa2951

文献信息

• Methods of producing metal sulfides, metal selenides, and metal sulfides/selenides having controlled architectures using kinetic control
  申请人：THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

  公开号：US10767112B2

  公开（公告）日：2020-09-08

  The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q1, Q2, Q3, R1, R2, R3, R5, and X are defined within the specification.

  本发明涉及制备金属硫化物、金属硒化物或金属硫化物/硒化物纳米颗粒及其衍生产品的方法。在不同的实施方案中，纳米颗粒由前体金属盐和某些含硫和/或硒的前体反应得到，这些前体各自独立地具有式 (I)、(II) 或 (III) 结构，或其异构体、盐或同系物，其中 Q1、Q2、Q3、R1、R2、R3、R5 和 X 在说明书中定义。
• USE OF SULFUR AND SELENIUM COMPOUNDS AS PRECURSORS TO NANOSTRUCTURED MATERIALS
  申请人：The Trustees of Columbia University in the City of New York

  公开号：EP3049370A1

  公开（公告）日：2016-08-03
• METHODS OF PRODUCING METAL SULFIDES, METAL SELENIDES, AND METAL SULFIDES/SELENIDES HAVING CONTROLLED ARCHITECTURES USING KINETIC CONTROL
  申请人：THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

  公开号：US20170369779A1

  公开（公告）日：2017-12-28

  The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q 1 ,Q 2 ,Q 3 ,R 1 ,R 2 ,R 3 ,R 5 , and X are defined within the specification.
• US4097605A
  申请人：——

  公开号：US4097605A

  公开（公告）日：1978-06-27
• [EN] PRECURSOR CHEMISTRY FOR QUANTUM DOT SYNTHESIS ENABLING TEMPERATURE-INDEPENDENT MODULATION OF REACTIVITY<br/>[FR] CHIMIE DE PRÉCURSEUR POUR LA SYNTHÈSE DE POINTS QUANTIQUES PERMETTANT UNE MODULATION DE LA RÉACTIVITÉ INDÉPENDANTE DE LA TEMPÉRATURE
  申请人：UNIV ILLINOIS

  公开号：WO2021097217A1

  公开（公告）日：2021-05-20

  Provided herein are methods of making a high-quality quantum dot (QD), including by providing anion precursor chemistry that enables chemical modulation of precursor reactivity, thereby, allowing independent optimization of reaction temperature and precursor reactivity to systematically grow high quality QDs and by providing specially configured tunable precursors and related chemistry to facilitate separate reaction pathways for nucleation and growth, thereby accessing heat-up based synthesis of high-quality QD, including core-shell QDs. The methods may include providing a base-QD and a first anion or cation precursor having a composition comprising an anion or a cation element, respectively, and a modification agent. At least one add-layer is grown on the base-QD at a growth temperature, thereby making the high-quality QD comprising the base-QD and the at least one add-layer. At least one add-layer may have a composition comprising an add-layer cation element and an add-layer anion element.