1-[(4-Ethenylbenzene-1-sulfonyl)oxy]pyrrolidine-2,5-dione | 138046-15-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1-[(4-Ethenylbenzene-1-sulfonyl)oxy]pyrrolidine-2,5-dione
• 英文别名: (2,5-dioxopyrrolidin-1-yl) 4-ethenylbenzenesulfonate
• CAS: 138046-15-8
• 化学式: C₁₂H₁₁NO₅S
• 分子量: 281.29
• InChiKey: PKFBPWIRUVYZRD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.1
• 重原子数：
  19
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.17
• 拓扑面积：
  89.1
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern
  申请人：——

  公开号：US20020055064A1

  公开（公告）日：2002-05-09

  Disclosed is an anti-reflective coating composition for forming an anti-reflective coating as an undercoating layer is provided, comprising a crosslinking agent, which is at least one compound selected from nitrogen-containing compounds having an amino group(s) and/or an imino group(s) at least two hydrogen atoms of which are substituted by a hydroxyalkyl group(s) and/or an alkoxyalkyl group(s), and an acidic compound, wherein the crosslinking agent is such that the proportion of its low-molecular-weight component not larger than a trimer is adjusted to be 15 wt % or less; a multilayer photoresist material using the composition; and a method for forming a pattern. According to the present invention, even in the formation of a hyperfine pattern, it is possible to provide a photoresist pattern having a rectangular cross-sectional profile in relation to the substrate without causing any undesirable phenomena, such as footing, undercutting, etc. at is bottom.

  本发明公开了一种用于形成作为底涂层的减反射涂层的减反射涂层组合物，该组合物包含一种交联剂，该交联剂是至少一种选自具有氨基和/或亚氨基的含氮化合物的化合物，其至少两个氢原子被羟基烷基和/或烷氧基烷基取代、和一种酸性化合物，其中交联剂应使其不大于三聚体的低分子量组分的比例调整为 15 wt % 或更少；使用该组合物的多层光阻材料；以及形成图案的方法。根据本发明，即使在形成超细图案的过程中，也可以提供相对于基底具有矩形横截面轮廓的光刻胶图案，而不会在底部造成任何不良现象，如底脚、下切等。
• Method for filling fine hole
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20030032280A1

  公开（公告）日：2003-02-13

  A method for filling a fine hole, having a hole pattern diameter of less than or equal to 0.18 &mgr;m, comprising the following steps of: (i) filling the fine hole with filler which is obtained by dissolving into an organic solvent a nitrogen-containing compound having mean molecular weight of less than or equal to 800 and containing at least one kind selected from melamine, benzoguanamine, acetoguanamine, glycol uryl, urea, thiourea, guanidine, alkyleneurea and succinylamide, in which hydrogen atoms of amino groups are substituted by at least one of hydroxyalkyl groups and alkoxyalkyl groups or both of the groups; (ii) drying the filler; and (iii) heating said filler at a temperature of 150-250° C., whereby no bubble is generated when the fine hole is filled.

  一种填充细孔的方法，其孔型直径小于或等于 0.18 &mgr;m，包括以下步骤：(i) 用填料填充细孔，该填料是通过将平均分子量小于或等于 800 的含氮化合物溶解到有机溶剂中得到的，该化合物含有至少一种选自三聚氰胺、苯并胍胺、乙酰胍胺、乙二醇尿素、脲、硫脲、胍、亚烷基脲和琥珀酰氨的基团，其中氨基的氢原子被羟基烷基和烷氧基烷基中的至少一个基团或这两个基团取代；(iii) 在 150-250°C 的温度下加热所述填料。,从而在填充细孔时不会产生气泡。
• Base material for lithography
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20040121260A1

  公开（公告）日：2004-06-24

  There is provided a base material for lithography that is capable of achieving superior film formation characteristics, while maintaining good light absorption characteristics. The base material for lithography comprises (a) a cross linking agent formed from a specific nitrogen containing compound, (b) a copolymer comprising two types of (meth)acrylate ester units as represented by the general formulas (1) and (2) shown below, and (c) an organic solvent: 1 wherein, R 1 represents a hydroxyl group or a carboxyl group or the like, and X represents an alkyl chain of 1 to 4 carbon atoms; and 2 wherein, R 2 represents a hydroxyl group or a carboxyl group or the like, Y represents —SO 2 —, —CO— or —SO—; and n represents a number from 1 to 4.
• HALOGEN-FREE SULPHONIC ACID ESTER AND/OR SULPHINIC ACID ESTER AS FLAME RETARDANT, FLAME RETARDANT SYNERGISTS AND RADICAL GENERATORS IN PLASTICS
  申请人：FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E. V.

  公开号：US20200231783A1

  公开（公告）日：2020-07-23

  The present invention relates to the use of halogen-free sulphonic acid esters and/or sulphinic acid esters as flame retardant and/or flame retardant synergists in plastics. The invention furthermore relates to the use of said compounds as radical generators in plastics, particularly in order to increase the molecular weight of the plastics, to branch and/or cross-link the plastics, to reduce the molecular weight of the plastics, to influence the molecular weight distribution of the plastics and to graft unsaturated monomers to the plastics. The present invention furthermore relates to the use of flame-retardant plastic compositions in the electrical or electronics industry, construction industry, transport industry, preferably automobiles, aircraft, trains and ships, for medical applications, for household appliances, vehicle parts, consumer products, packaging, furniture and textiles.
• US6693049B2
  申请人：——

  公开号：US6693049B2

  公开（公告）日：2004-02-17