申请人:Freescale Semiconductor, Inc.
公开号:US10336606B2
公开(公告)日:2019-07-02
A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.
本发明提供了一种由电容式湿度传感器组成的半导体器件,该电容式湿度传感器由位于 CMOS 衬底或 MEMS 和 CMOS 组合衬底上的导电金属层上的湿敏聚合物层电嫁接而成,并通过钝化层暴露在开口内;还提供了由封装器件组成的封装,以及在半导体器件内形成电容式湿度传感器的方法。