9,9-bis(4-chlorophenyl)fluorene | 117766-41-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 芴
• 英文名称: 9,9-bis(4-chlorophenyl)fluorene
• 英文别名: 9,9-Bis(4-chlorophenyl)-9H-fluorene
• CAS: 117766-41-3
• 化学式: C₂₅H₁₆Cl₂
• 分子量: 387.308
• InChiKey: HYBLFOADKYTPGT-UHFFFAOYSA-N

物化性质

• 沸点：
  480.2±45.0 °C(Predicted)
• 密度：
  1.295±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  7.9
• 重原子数：
  27
• 可旋转键数：
  2
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.04
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  2-biphenylyl magnesium bromide 在 硫酸 作用下， 以 溶剂黄146 为溶剂， 生成 9,9-bis(4-chlorophenyl)fluorene
  参考文献：
  名称：

  Mechanism of cyclodehydration of 2-phenyltriarylcarbinols

  摘要：

  DOI：

  10.1021/ja00986a018

文献信息

• Copolymers Composed of Perfluoroalkyl and Ammonium-Functionalized Fluorenyl Groups as Chemically Stable Anion Exchange Membranes
  作者：Mizuki Ozawa、Taro Kimura、Ryo Akiyama、Junpei Miyake、Junji Inukai、Kenji Miyatake

  DOI：10.1246/bcsj.20170185

  日期：2017.10.15

  ammonium groups could be introduced up to 4.0 per fluorenylidene biphenylene unit, resulting in the ion exchange capacity (IEC) of the resulting copolymers ranging from 1.0 to 1.8 meq g−1. The copolymers provided bendable and transparent membranes by solution casting. The membranes exhibited phase-separated morphology based on the hydrophilic/hydrophobic differences in the copolymer components. A copolymer

  我们报告了一系列新型铵官能化全氟亚烷基/芳族共聚物的合成和性能。特别地，研究了铵基团的数量和位置对共聚物薄膜性能的影响。芴亚联亚苯基被用作铵基团的支架。通过控制氯甲基化反应条件，每个亚芴亚联苯单元最多可引入 4.0 个铵基，从而使所得共聚物的离子交换容量 (IEC) 为 1.0 至 1.8 meq g-1。共聚物通过溶液浇铸提供可弯曲且透明的膜。基于共聚物组分的亲水/疏水差异，膜表现出相分离的形态。IEC = 1 的共聚物膜。0 meq g-1 在 80 °C 水中显示出高氢氧离子电导率（约 70 mS cm-1），在 1 M KOH 水溶液中显示出良好的碱性稳定性。在 60 °C 下超过 1000 小时。膜仅表现出轻微的降解...
• 一种制备取代芳基芴及其衍生物的方法
  申请人：陕西维世诺新材料有限公司

  公开号：CN114804994A

  公开（公告）日：2022-07-29

  本发明涉及一种制备取代芳基芴及其衍生物的方法，首先向反应器中加入四氢呋喃和2‑溴联苯，然后在‑70℃下搅拌1小时，然后加入仲丁基锂，再加入取代芳基酮，价稀盐酸淬灭抽滤后得固体，再用石油醚洗涤即得高纯度中间体S1，向反应器中加入中间体S1、冰醋酸和稀盐酸，在80℃下反应4小时，降温，抽滤，得到高纯度产品。本发明的优点：反应简单易操作，产率高，后处理简单，废水少。
• LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1679184A1

  公开（公告）日：2006-07-12

  A laminate having a low relative dielectric constant and exhibiting excellent adhesion, a method of forming the laminate, an insulating film, a semiconductor device, and a film-forming composition are provided. A laminate according to the invention includes: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming a laminate according to the invention includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

  本发明提供了一种具有低相对介电常数并表现出优异附着力的层压板、一种形成该层压板的方法、一种绝缘膜、一种半导体器件和一种成膜组合物。 根据本发明的层压板包括：第一硅基薄膜；第二硅基薄膜；以及有机薄膜，其中第二硅基薄膜包括含有碳碳双键或碳碳三键的一价有机基团。 根据本发明形成层压板的方法包括：在基底上形成第一硅基薄膜的第一涂层；在第一涂层上形成第二硅基薄膜的第二涂层，第二涂层包括含有碳碳双键或碳碳三键的一价有机基团；在第二涂层上形成有机薄膜的第三涂层；以及固化包括第一至第三涂层的多层薄膜。
• INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1696478A1

  公开（公告）日：2006-08-30

  The invention provides a method of forming an insulating film which exhibits resistance against processing such as RIE used when forming a dual-damascene structure while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a substrate by hydrolysis and condensation of a silane compound. A solution obtained by dissolving a polycarbosilane compound shown by the following general formula in a solvent is applied to the polysiloxane insulating film, and the resulting coating is heated to form a polycarbosilane insulating film. An organic insulating film is then formed on the polycarbosilane insulating film.

  本发明提供了一种形成绝缘膜的方法，这种绝缘膜既能抵抗在形成双大马士革结构时使用的 RIE 等加工，又能保持聚硅氧烷绝缘膜较低的相对介电常数。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合作用在基材上形成的。将下表通式所示的聚碳硅烷化合物溶解在溶剂中得到的溶液涂抹在聚硅氧烷绝缘膜上，然后加热涂层，形成聚碳硅烷绝缘膜。 然后在聚碳硅烷绝缘膜上形成有机绝缘膜。
• Stacked film, insulating film and substrate for semiconductor
  申请人：JSR CORPORATION

  公开号：US20030077461A1

  公开（公告）日：2003-04-24

  A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

  本发明公开了一种在半导体器件等中与通过 CVD 工艺形成的涂膜具有优异附着力的半导体用叠层膜、具有该叠层膜的绝缘膜以及使用该绝缘膜的半导体用基板。叠层膜包括(A)碳含量大于等于 60%（重量百分比）的有机化合物膜和(B)通过加热至少一种选自上述通式(51)至(54)所代表的特定化合物的水解缩合物而制备的膜。