The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent composition, comprising [I] a compound generating a fluorine ion in water, [11] a carbon radical generating agent, [111] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used:
(wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).
本发明旨在提供一种半导体表面处理剂组合物,该组合物能够在半导体器件等的生产过程中在短时间内容易地剥离抗反射涂层、抗蚀层和固化抗蚀层,以及一种处理半导体表面的方法,其中包括使用该组合物。本发明涉及一种半导体表面处理剂组合物,包括[I]一种在
水中生成
氟离子的化合物、[11]一种碳自由基生成剂、[111]
水、[IV]一种有机溶剂和[V]至少一种选自由通式[1]表示的
羟胺和
羟胺衍
生物组成的组中的化合物,以及一种处理半导体表面的方法,包括使用该组合物:
(其中 R1 代表直链、支链或环状 C1-6 烷基,或具有 1 至 3 个羟基的直链或支链 C1-4 取代烷基;R2 代表氢原子、直链、支链或环状 C1-6 烷基,或具有 1 至 3 个羟基的直链或支链 C1-4 取代烷基)。