3-Benzotriazol-1-yl-propane-1,2-diol | 123414-03-9

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并三唑类
• 英文名称: 3-Benzotriazol-1-yl-propane-1,2-diol
• 英文别名: 3-(1H-benzo[d][1,2,3]triazol-1-yl)propane-1,2-diol；3-(benzotriazol-1-yl)propane-1,2-diol
• CAS: 123414-03-9
• 化学式: C₉H₁₁N₃O₂
• mdl: MFCD29980975
• 分子量: 193.205
• InChiKey: WVIXTJQLKOLKTQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.1
• 重原子数：
  14
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.333
• 拓扑面积：
  71.2
• 氢给体数：
  2
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  Acetic acid 1-acetoxymethyl-2-benzotriazol-1-yl-ethyl ester 在 氨 作用下， 以 甲醇 为溶剂， 反应 24.0h， 以88%的产率得到3-Benzotriazol-1-yl-propane-1,2-diol
  参考文献：
  名称：

  核苷的无环类似物。羟烷基苯并咪唑和-苯并三唑的合成

  摘要：

  DOI：

  10.1007/bf00473325

文献信息

• POLISHING METHOD
  申请人：HITACHI CHEMICAL COMPANY, LTD.

  公开号：US20150031205A1

  公开（公告）日：2015-01-29

  Provided is a polishing method including a step of preparing a substrate having ( 1 ) silicon nitride as a stopper, and to a direction of a surface subjected to polishing from the stopper, ( 2 ) at least a portion of a wiring metal, and ( 3 ) at least a portion of an insulating material; a step of supplying a CMP slurry, and thereby polishing the ( 2 ) wiring metal and ( 3 ) insulating material on the direction of the surface subjected to polishing; and a step of stopping polishing before the ( 1 ) silicon nitride is exposed and completely removed, in which method the CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less. Through this method, an interlayer insulating film and a stopper can be polished at a high selectivity while metal and the interlayer insulating film are removed at high polishing rates, and thus a semiconductor device having high dimensional accuracy can be produced.

  提供了一种抛光方法，包括以下步骤：准备基板，该基板具有（1）硅氮化物作为停止层，在从停止层到抛光表面的方向上具有（2）至少一部分的布线金属和（3）至少一部分的绝缘材料；供应CMP研磨液，并在抛光表面的方向上抛光（2）布线金属和（3）绝缘材料；在（1）硅氮化物暴露并完全去除之前停止抛光。该方法中，CMP研磨液含有（A）一种共聚物，其中包括（a）一种带负电且不含疏水取代基的单体和（b）一种含有疏水取代基的单体；（B）磨料颗粒；（C）酸；（D）氧化剂；和（E）液体介质。组分（B）在CMP研磨液中具有+10 mV或更高的ζ电位，组分（A）的共聚比（a）：（b）为25：75至75：25的摩尔比，pH值为5.0或更低。通过该方法，可以在高选择性下抛光互层绝缘膜和停止层，同时以高抛光速率去除金属和互层绝缘膜，从而生产具有高尺寸精度的半导体器件。
• ABRASIVE LIQUID FOR METAL AND METHOD FOR POLISHING
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP1137056A1

  公开（公告）日：2001-09-26

  An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms a chemical bond, to thereby form a protecting film, (4) a second protecting film-forming agent such as polyacrylic acid, polyamido acid or a salt thereof which assists the first protecting film-forming agent in forming a protecting film and (5) water; and a method for polishing.

  一种用于金属的研磨液，包括：(1) 金属的氧化剂；(2) 氧化金属的溶解剂；(3) 第一保护成膜剂，如氨基酸或唑，其物理吸附在金属表面和/或形成化学键，从而形成保护膜；(4) 第二保护成膜剂，如聚丙烯酸、聚酰胺酸或其盐，其协助第一保护成膜剂形成保护膜；(5) 水；以及抛光方法。
• MATERIALS FOR POLISHING LIQUID FOR METAL, POLISHING LIQUID FOR METAL, METHOD FOR PREPARATION THEREOF AND POLISHING METHOD USING THE SAME
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP1150341A1

  公开（公告）日：2001-10-31

  Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

  本发明提供了一种金属抛光液，它由氧化剂、氧化金属蚀刻剂、保护膜形成剂、保护膜形成剂的溶解促进剂和水组成；还提供了一种生产方法和一种抛光方法。此外，还提供了用于金属抛光液的材料，其中包括氧化金属蚀刻剂、保护膜形成剂和保护膜形成剂的溶解促进剂。
• POLISHING COMPOUND FOR CHEMIMECHANICAL POLISHING AND POLISHING METHOD
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP1223609A1

  公开（公告）日：2002-07-17

  This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable that the water-soluble polymer has a weight-average molecular weight of 500 or more and the polishing medium has a coefficient of kinetic friction of 0.25 or more, a Ubbelode's viscosity of from 0.95 cP to 1.5 cP and a point-of-inflection pressure of 50 gf/cm2.

  本发明提供了一种用于 CMP 的抛光介质，它由氧化剂、金属氧化物溶解剂、保护膜形成剂、水溶性聚合物和水组成，并提供了一种利用这种抛光介质的抛光方法。此外，水溶性聚合物的重量平均分子量最好为 500 或以上，抛光介质的动摩擦系数最好为 0.25 或以上，乌贝洛德粘度最好为 0.95 cP 至 1.5 cP，反射点压力最好为 50 gf/cm2。
• Aqueous dispersion for chemical mechanical polishing and its use for semiconductor device processing
  申请人：JSR Corporation

  公开号：EP1386949A2

  公开（公告）日：2004-02-04

  The invention provides an aqueous dispersion for chemical mechanical polishing, by which scratches are reduced even for an article to be polished having a dielectrics low in mechanical strength, both copper film and barrier metal film can be polished with high efficiency, and a sufficiently planarized finished surface with high precision can be provided without overpolishing the dielectrics, and a production process of a semiconductor device. The aqueous dispersion for chemical mechanical polishing comprises abrasive grains, wherein the abrasive grains include (A) simple particles composed of at least one selected from inorganic particles and organic particles, and (B) composite particles. It is preferred that the simple particles (A) are composed of inorganic particles and composite particles (B) are composed of inorganic organic composite particles that formed of organic particles and inorganic particles combined integraly. The production process of a semiconductor device comprises the step of polishing a surface to be polished of a semiconductor material with the aqueous dispersion for polishing.

  本发明提供了一种用于化学机械抛光的水性分散液，通过该分散液，即使是对机械强度较低的电介质进行抛光的物品，也能减少划痕，铜膜和阻挡金属膜都能高效抛光，并且在不过度抛光电介质的情况下，也能提供具有高精度的充分平面化的成品表面，以及一种半导体器件的生产工艺。 用于化学机械抛光的水性分散液包括磨粒，其中磨粒包括 (A) 由至少一种无机颗粒和有机颗粒组成的简单颗粒，以及 (B) 复合颗粒。优选的是，简单颗粒（A）由无机颗粒组成，复合颗粒（B）由无机有机复合颗粒组成，该复合颗粒由有机颗粒和无机颗粒整体组合而成。半导体设备的生产工艺包括用抛光用水分散液抛光半导体材料的待抛光表面的步骤。