[EN] 6H-PYRROLO[3,2-B:4,5-B']BIS[1,4]BENZOTHIAZINE-6-CARBOXYLIC ACID ESTERS AS ORGANIC SEMICONDUCTOR MATERIALS FOR USE IN ELECTRONIC DEVICES [FR] ESTERS D'ACIDE 6H-PYRROLO[3,2-B:4,5-B']BIS [1,4] BENZOTHIAZINE-6 CARBOXYLIQUE COMME MATÉRIAUX SEMI-CONDUCTEURS UTILES DANS DES DISPOSITIFS ÉLECTRONIQUES
The present invention provides compounds of formula (I) wherein X is O, S or NR
10
, wherein R
10
is H, C
1-30
-alkyl, substituted C
1-30
-alkyl, C
2-30
-alkenyl, substituted C
2-30
-alkenyl, C
2-30
-alkynyl, substituted C
2-30
-alkynyl or C(0)-OR, R
1
and R
11
are independently from each other selected from the group consisting of C
1-30
-alkyl, substituted C
1-30
-alkyl, C
2-30
-alkenyl, substituted C
2-30
-alkenyl, C
2-30
-alkynyl, substituted C
2-30
-alkynyl, C
5-8
-cycloalkyl, substituted C
5-8
-cycloalkyl, C
5-8
-cycloalkenyl, and substituted C
5-8
-cycloalkenyl, and an electronic device comprising the compounds as semiconducting material.
[EN] 6H-PYRROLO[3,2-B:4,5-B']BIS[1,4]BENZOTHIAZINE-6-CARBOXYLIC ACID ESTERS AS ORGANIC SEMICONDUCTOR MATERIALS FOR USE IN ELECTRONIC DEVICES<br/>[FR] ESTERS D'ACIDE 6H-PYRROLO[3,2-B:4,5-B']BIS [1,4] BENZOTHIAZINE-6 CARBOXYLIQUE COMME MATÉRIAUX SEMI-CONDUCTEURS UTILES DANS DES DISPOSITIFS ÉLECTRONIQUES
申请人:BASF SE
公开号:WO2016096967A1
公开(公告)日:2016-06-23
The present invention provides compounds of formula (I) wherein X is O, S or NR10,wherein R10 is H, C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl or C(0)-OR11, R1 and R11 are independently from each other selected from the group consisting of C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl, C5-8-cycloalkyl, substituted C5-8-cycloalkyl, C5-8-cycloalkenyl, and substituted C5-8-cycloalkenyl, and an electronic device comprising the compounds as semiconducting material.
6H-Pyrrolo[3,2-b:4,5-bâ²]bis[1,4]benzothiazine (PBBTZ, 1) and its two 6-substituted derivatives (2 and 3) were conveniently synthesized. Their optical properties were studied by UV-vis and fluorescence spectroscopy, and electrochemical properties were investigated by cyclic voltammetry (CV). Good thermal stability was observed by thermogravimetric analysis. X-Ray analysis revealed a coplanar structure and a column stacking in the single crystal of compound 1. OFET measurements showed that 1â3 were p-type semiconductors. The performance of these devices displayed good reproducibility at ambient conditions. When devices containing 1 were fabricated on OTS-treated SiO2/Si substrates at 60 °C, the best performance was achieved with the average hole mobility as high as 0.34 cm2Vâ1 sâ1 and the on/off ratio about 106â107. This performance resulted from the well-ordered molecular packing as revealed by XRD and AFM analysis.