Synthesis, Characterization, and Non-Volatile Memory Device Application of an N-Substituted Heteroacene
作者:Chengyuan Wang、Jiangxin Wang、Pei-Zhou Li、Junkuo Gao、Si Yu Tan、Wei-Wei Xiong、Benlin Hu、Pooi See Lee、Yanli Zhao、Qichun Zhang
DOI:10.1002/asia.201301547
日期:2014.3
N‐substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N‐substituted heteroacene 2‐(4′‐(diphenylamino)phenyl)‐4,11‐bis((triisopropylsilyl)ethynyl)‐1H‐imidazo[4,5‐b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich‐structure memory devices
N-取代的杂并苯已被广泛用作有机电子设备中的电活性层,在有机电阻存储设备中仅研究了其中的少数几个。在这里,设计了一种新型的N-取代的杂并苯2-(4'-(二苯氨基)苯基)-4,11-双((三异丙基甲硅烷基)乙炔基)-1H-咪唑并[4,5-b]吩嗪(DBIP),合成并表征。已经制造出了基于DBIP的三明治结构存储设备,这些设备显示出非易失性和稳定的存储特性,并具有良好的耐久性能。