AbstractDeveloping polymers with high electrical conductivity (σ) after n‐doping is a great challenge for the advance of the field of organic thermoelectrics (OTEs). Herein, we report a series of thiazole imide‐based n‐type polymers by gradually increasing selenophene content in polymeric backbone. Thanks to the strong intramolecular noncovalent N⋅⋅⋅S interaction and enhanced intermolecular Se⋅⋅⋅Se interaction, with the increase of selenophene content, the polymers show gradually lowered LUMOs, more planar backbone, and improved film crystallinity versus the selenophene‐free analogue. Consequently, polymer PDTzSI−Se with the highest selenophene content achieves a champion σ of 164.0 S cm−1 and a power factor of 49.0 μW m−1 K−2 in the series when applied in OTEs after n‐doping. The σ value is the highest one for n‐type donor‐acceptor OTE materials reported to date. Our work indicates that selenophene substitution is a powerful strategy for developing high‐performance n‐type OTE materials and selenophene incorporated thiazole imides offer an excellent platform in enabling n‐type polymers with high backbone coplanarity, deep‐lying LUMO and enhanced mobility/conductivity.
摘要开发 n 掺杂后具有高导电率(σ)的聚合物是推动有机热电(OTE)领域发展的一大挑战。在此,我们报告了一系列基于噻唑亚胺的 n 型聚合物,其方法是逐渐增加聚合物骨架中的硒吩含量。因此,硒吩含量最高的聚合物 PDTzSI-Se 在 n 掺杂后应用于 OTE 时,其冠军 σ 为 164.0 S cm-1,功率因数为 49.0 μW m-1 K-2。该 σ 值是迄今为止报告的 n 型供体-受体 OTE 材料中最高的。我们的工作表明,硒吩取代是开发高性能 n 型 OTE 材料的有力策略,硒吩与噻唑亚胺的结合为实现具有高骨架共面性、深层 LUMO 和增强迁移率/电导率的 n 型聚合物提供了一个极好的平台。