1,4,6-trimethyl-anthracene | 42410-06-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 1,4,6-trimethyl-anthracene
• 英文别名: 1,4,6-Trimethyl-anthracen；1,4,6-Trimethylanthracene
• CAS: 42410-06-0
• 化学式: C₁₇H₁₆
• 分子量: 220.314
• InChiKey: MQNUIQLFTAUFIF-UHFFFAOYSA-N

物化性质

• 沸点：
  384.2±22.0 °C(Predicted)
• 密度：
  1.066±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5.5
• 重原子数：
  17
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.18
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  1,4,6-trimethyl-anthracene 在 chromium(VI) oxide 、 溶剂黄146 作用下， 生成 1,4,6-trimethyl-anthraquinone
  参考文献：
  名称：

  Predictions of strontium accommodation in A₂B₂O₇ pyrochlores

  摘要：

  A2B2O7 烧绿石氧化物被认为是固定裂变产物的潜在宿主材料。因此，确定这些化合物容纳裂变产物离子的相对能力非常重要。为了解决这个问题，我们使用计算机模拟来预测与 Sr2+ 溶液相关的结构和相对平衡能量，其组成范围很广。结果表明，锶是通过氧空位补偿来替代 A 主阳离子的。这导致了一种非化学计量成分。通过构建等值线能量图，确定了最佳成分和缺陷簇结构。

  DOI：

  10.1557/jmr.2002.0302
• 作为产物：
  描述：

  Acetic acid 1,4,7-trimethyl-anthracen-9-yl ester 在 sodium hydroxide 、 锌 作用下， 生成 1,4,6-trimethyl-anthracene
  参考文献：
  名称：

  1,4,6-三甲基蒽和1,4,6-三甲基芴。甲基芴的Nmr光谱

  摘要：

  描述了1,4,6-三甲基蒽和1,4,6-三甲基芴的合成。Nmr光谱法仅用于限定甲基芴中的取代基。因为1-，2-和3-甲基质子具有相似的化学位移；由4-甲基取代基引起的信号在较低的场。

  DOI：

  10.1039/p19730001511

文献信息

• DE481819
  申请人：——

  公开号：——

  公开（公告）日：——
• Elbs, Journal fur praktische Chemie (Leipzig 1954), 1890, vol. <2> 41, p. 147
  作者：Elbs

  DOI：——

  日期：——
• DE512403
  申请人：——

  公开号：——

  公开（公告）日：——
• Cyclic hydrocarbon and process for preparing the same
  申请人：GEN ANILINE WORKS INC

  公开号：US01776925A1

  公开（公告）日：1930-09-30
• Current mechanisms in VLWIR Hg1−xCdxTe photodiodes
  作者：A. I. D'Souza、R. E. Dewames、P. S. Wijewarnasuriya、G. Hildebrandt、J. M. Arias

  DOI：10.1007/bf02665838

  日期：2001.6

  VLWIR (lambda (c) similar to 15 mum to 17 ym at 78 K) detectors have been characterized as a function of temperature to determine the dominant current mechanisms impacting detector performance. I-d - V-d curves indicate that VLWIR detectors are diffusion limited in reverse and near zero bias voltages down to temperatures in the 40 K range. At 30 K the detectors are limited by tunneling currents in reverse bias. Since the detectors are diffusion limited near zero bias down to 40 K, the R(o)A(imp) versus temperature data represents the diffusion current performance of the detector as a function of temperature. The detector spectral response measurement and active layer thickness are utilized to calculate the HgCdTe layer x value and the optical activation energy E-a optical. The activation energy, E-a electrical, Obtained from the measured diffusion limited R(o)A(imp) versus temperature data is not equal to the activation energy, E-a optical, obtained from the spectral response measurement for all x values measured. E-a electrical = beta* E-a optical, where beta ranges between 0.64 and 1.0 For cutoff wavelengths in the less than or equal to 9 mum at 78 K, E-a electrical = E-a optical. E-a electrical = 0.65* E-a optical have been measured for lambda (c) = 17 mum at 78 K detectors. As the band gap energy decreases to values in the range of 70 meV and lower, it is reasonable to expect a more dominant role of band tailing effects on the transport properties of the material system. In such a picture, one would expect the optical band gap to be unmodified, whereas the intrinsic concentration could be enhanced from its value for the ideal semiconductor. Such a picture could explain the observed behavior. Further probing experiments and modeling efforts will help clarify the physics of this behavior.