Pattern forming method, resist pattern, and process for producing electronic device
申请人:FUJIFILM Corporation
公开号:US10578968B2
公开(公告)日:2020-03-03
The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.
本发明的目的是提供一种能够提供良好的DOF和EL的图案形成方法、一种由该图案形成方法形成的抗蚀剂图案,以及一种制造电子设备的方法,包括该图案形成方法。本发明的图案形成方法包括步骤 a:在基板上涂布活性光敏或辐射敏感树脂组合物以形成抗蚀剂薄膜;步骤 b:在抗蚀剂薄膜上涂布用于形成上层薄膜的组合物以在抗蚀剂薄膜上形成上层薄膜;步骤 c:曝光形成有上层薄膜的抗蚀剂薄膜;步骤 d:使用显影剂显影曝光的抗蚀剂薄膜以形成图案,其中活性光敏或辐射敏感树脂组合物包含疏水性树脂。