1-Methylbenzothiophenium-Ion | 45752-18-9

• 分子结构分类: 有机化合物 - 苯类化合物
• 英文名称: 1-Methylbenzothiophenium-Ion
• 英文别名: S-Methyl-benzothiophenium；5-Methylbenzothiophenium；1-Methyl-1-benzothiophen-1-ium
• CAS: 45752-18-9
• 化学式: C₉H₉S
• 分子量: 149.236
• InChiKey: RCHVMVBFJXARNB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.6
• 重原子数：
  10
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.11
• 拓扑面积：
  1
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  2-(2-碘苯基)-1-乙醇 在 四氯化碳 、 氧气 、 三苯基膦 作用下， 以 乙醇 、 二氯甲烷 、 乙腈 为溶剂， 反应 14.0h， 生成 1-Methylbenzothiophenium-Ion
  参考文献：
  名称：

  自由基的SAM酶HemN观察到基于Rad的均质取代。

  摘要：

  基于硫的均质取代（SH反应）在合成化学中起着重要作用，但尚不清楚这种反应是否会在带正电的such化合物上发生。在厌氧共卟啉原III氧化酶HemN（一种参与血红素生物合成的自由基S-腺苷-1-蛋氨酸（SAM）酶）的研究中，我们观察到了支持脱氧腺苷（dAdo）的二-（5'-脱氧腺苷）甲基s的产生。 ）在SAM center中心发生自由基介导的SH反应。然后通过密度泛函理论计算和模型反应对detail基SH反应进行了详细研究，结果表明这类反应在热力学上是有利的，并且在动力学上是有效的。这些发现代表了基于sulf的SH反应的首次报道，在合成化学中可能有用。我们的研究还证明了自由基SAM超家族酶具有显着的催化混杂性。

  DOI：

  10.1002/anie.202000812

文献信息

• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, ACID GENERATOR, PHOTOREACTIVE QUENCHER, AND COMPOUND
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：US20160280679A1

  公开（公告）日：2016-09-29

  A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component including a compound (B0-1) represented by general formula (b0) shown below in which Ra 1 represents an aromatic ring; Ra 01 represents an alkyl group of 5 or more carbon atoms optionally having a substituent; Ra 02 and Ra 03 each independently represents an alkyl group of 1 to 10 carbon atoms optionally having a substituent; n1 represents an integer of 1 to 5; n2 represents an integer of 0 to 2; n3 represents an integer of 0 to 4; and X − represents a counteranion.

  一种抗蚀组合物，暴露后产生酸并在酸的作用下在显影溶液中表现出溶解度改变，包括在酸的作用下在显影溶液中表现出溶解度改变的碱性组分和包括一种化合物（B0-1）的酸发生组分，该化合物由下面所示的一般式（b0）表示，其中Ra1代表芳香环；Ra01代表具有5个或更多碳原子的烷基基团，可选地具有取代基；Ra02和Ra03各自独立地表示具有1至10个碳原子的烷基基团，可选地具有取代基；n1表示1至5的整数；n2表示0至2的整数；n3表示0至4的整数；X−表示一个反离子。
• Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern
  申请人：FUJIFILM Corporation

  公开号：US10234759B2

  公开（公告）日：2019-03-19

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).

  本发明提供了一种对辐照或辐射敏感的树脂组合物，该组合物包括树脂(A)和以下通式(I)的任何化合物(B)。(在通式（I）中，Rf 代表氟原子或含有至少一个氟原子的一价有机基团；R1 代表氢原子或不含氟原子的一价取代基；X1 代表至少含有两个碳原子的一价有机基团，或可选择引入氟原子以外的取代基的甲基，条件是 X1 可与 R1 键合，从而形成一个环；以及 Z 代表当暴露于放热射线或辐射时会转化为磺酸基团、酰亚胺酸基团或甲酰胺酸基团的分子）。
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND COMPOUND
  申请人：FUJIFILM CORPORATION

  公开号：US20140349223A1

  公开（公告）日：2014-11-27

  Provided is an actinic-ray- or radiation-sensitive resin composition including a compound that when exposed to actinic rays or radiation, generates any of acids of general formula (I) below.
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150086912A1

  公开（公告）日：2015-03-26

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20150118628A1

  公开（公告）日：2015-04-30

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) comprising any of repeating units (A) of general formula (I) below, each of which contains an ionic structural moiety that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid in a side chain of the resin.