Furan containing diketopyrrolopyrrolecopolymers: synthesis, characterization, organic field effect transistor performance and photovoltaic properties
作者:Prashant Sonar、Samarendra P. Singh、Evan L. Williams、Yuning Li、Mui Siang Soh、Ananth Dodabalapur
DOI:10.1039/c2jm14989c
日期:——
In this work, we report design, synthesis and characterization of solution processable low band gap polymer semiconductors, poly3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-phenylene} (PDPP-FPF), poly3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-naphthalene} (PDPP-FNF) and poly3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-anthracene} (PDPP-FAF) using the furan-containing 3,6-di(furan-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DBF) building block. As DBF acts as an acceptor moiety, a series of donor–acceptor (D–A) copolymers can be generated when it is attached alternatively with phenylene, naphthalene or anthracene donor comonomer blocks. Optical and electrochemical characterization of thin films of these polymers reveals band gaps in the range of 1.55–1.64 eV. These polymers exhibit excellent hole mobility when used as the active layer in organic thin-film transistor (OTFT) devices. Among the series, the highest hole mobility of 0.11 cm2 V−1 s−1 is achieved in bottom gate and top-contact OTFT devices using PDPP-FNF. When these polymers are used as a donor and [70]PCBM as the acceptor in organic photovoltaic (OPV) devices, power conversion efficiencies (PCE) of 2.5 and 2.6% are obtained for PDPP-FAF and PDPP-FNFpolymers, respectively. Such mobility values in OTFTs and performance in OPV make furan-containing DBF a very promising block for designing new polymer semiconductors for a wide range of organic electronic applications.
4-c]吡咯-1,4-二酮-邻萘} (PDPP-FNF) 和聚3,6-二呋喃-2-基-2,5-二(2-辛基十二烷基)-吡咯并[3,4-c]吡咯-1、4-二酮-阿尔-蒽} (PDPP-FAF),使用含呋喃的 3,6-二(呋喃-2-基)吡咯并[3,4-c]吡咯-1,4(2H,5H)-二酮 (DBF) 构建模块。由于 DBF 具有受体分子的作用,因此当它与苯烯、萘或蒽供体共聚物嵌段交替连接时,可以生成一系列供体-受体(D-A)共聚物。这些聚合物薄膜的光学和电化学特性显示,其带隙范围在 1.55-1.64 eV 之间。这些聚合物在用作有机薄膜晶体管(OTFT)器件的活性层时,表现出优异的空穴迁移率。在这一系列聚合物中,使用 PDPP-FNF 的底栅和顶接触 OTFT 器件的空穴迁移率最高,达到 0.11 cm2 V-1 s-1。当这些聚合物用作有机光伏(OPV)器件中的供体和[70]PCBM 作为受体时,PDPP-FAF 和 PDPP-FNF 聚合物的功率转换效率(PCE)分别为 2.5% 和 2.6%。这种在 OTFT 中的迁移率和在 OPV 中的性能使得含呋喃的 DBF 成为一种非常有前途的材料,可用于设计新型聚合物半导体,广泛应用于有机电子领域。