p-xylilenediphosphine | 245081-37-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: p-xylilenediphosphine
• 英文别名: p-xylylenediphosphine；p-xylenediphosphine；[4-(Phosphanylmethyl)phenyl]methylphosphane
• CAS: 245081-37-2
• 化学式: C₈H₁₂P₂
• 分子量: 170.131
• InChiKey: YYJIBOQCGXRYMA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.9
• 重原子数：
  10
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  p-xylilenediphosphine 以 丙酮 、 苯 为溶剂， 反应 3.0h， 生成 5,5'-p-xylilenebis[4,6-(trichloromethyl)-2-phenyl-1,3,2,5-dioxaboraphosphorinane]
  参考文献：
  名称：

  Musina; Nikonov; Balueva, Russian Journal of General Chemistry, 1999, vol. 69, # 3, p. 407 - 412

  摘要：

  DOI：
• 作为产物：
  描述：

  1,4-对二氯苄 在 lithium aluminium tetrahydride 作用下， 以 乙醚 为溶剂， 反应 2.0h， 生成 p-xylilenediphosphine
  参考文献：
  名称：

  Musina; Nikonov; Balueva, Russian Journal of General Chemistry, 1999, vol. 69, # 3, p. 407 - 412

  摘要：

  DOI：

文献信息

• Alkyl Group VA metal compounds
  申请人：Shipley Company, L.L.C.

  公开号：US20030181746A1

  公开（公告）日：2003-09-25

  Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula R n M 1 X 3−n , where R is an alkyl, M 1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

  揭示了通过将VA族金属三卤化物与有机锂试剂或具有公式RnM1X3−n的化合物（其中R是烷基，M1是III A族金属，X是卤素，n是1到3的整数）反应，以高产率和高纯度制备单烷基VA族金属二卤化合物的方法。这种单烷基VA族金属二卤化合物基本上不含氧杂质、醚溶剂和金属杂质。通过还原这种单烷基VA族金属二卤化合物，可以轻松地高产率和高纯度地生产单烷基VA族金属二氢化合物。
• Alkyl group VA metal compounds
  申请人：Shenai-Khatkhate Vinayak Deodatta

  公开号：US20050033073A1

  公开（公告）日：2005-02-10

  A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.

  提供了一种通过格氏试剂与VA族金属卤化物在特定的醚溶剂中反应制备高收率和高纯度VA族有机金属化合物的方法。还提供了一种制备VA族有机金属氢化物的方法。
• MEMORY DEVICE, DATA RECORDING METHOD AND IC TAG
  申请人：Haramoto Yuichiro

  公开号：US20090116276A1

  公开（公告）日：2009-05-07

  A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting with the first electrode group.

  本发明的一种记忆装置，其特征在于通过激光束的点状照射形成液晶态的液晶化合物的分子排列，通过对含有液晶化合物的电导性液晶半导体材料层进行选择性热处理来存储信息的记忆装置，包括：第一电极组，包括若干个相互平行的线性电极；电导性液晶半导体材料层，以覆盖第一电极组的方式形成，该层含有具有长线性共轭结构基团并呈现为液晶相的液晶化合物；第二电极组，在电导性液晶半导体材料层上形成，包括若干个相互平行且与第一电极组相交的线性透明电极。
• Preparation of monoalkyl group 15 metal dihalides and dihydrides
  申请人：Shipley Co. L.L.C.

  公开号：EP1335416A1

  公开（公告）日：2003-08-13

  Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3-n where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

  公开了通过 VA 族金属三卤化物与有机锂试剂或式 RnM1X3-n 的化合物反应制备高产率和高纯度的单烷基 VA 族金属二卤化物化合物的方法，其中 R 为烷基，M1 为 IIIA 族金属，X 为卤素，n 为 1 至 3 的整数。通过还原这种单烷基 VA 族金属二卤化物化合物，可以很容易地生产出高产率和高纯度的单烷基 VA 族金属二氢化物化合物。
• Musina; Kuznetsov; Gubanov, Russian Journal of General Chemistry, 1999, vol. 69, # 6, p. 891 - 896
  作者：Musina、Kuznetsov、Gubanov、Balueva、Nikonov

  DOI：——

  日期：——