Positive resist composition and method of forming resist pattern using the same
申请人:FUJI PHOTO FILM CO., LTD.
公开号:US20040197708A1
公开(公告)日:2004-10-07
A positive resist composition comprising: (A) a fluorine atom-containing resin, wherein the resin comprises at least one group that increases a solubility of the resin in an alkali developer by the action of an acid; and (B) a sulfonium salt compound having a cation moiety, wherein the cation moiety contains at least one hydroxy group, and the sulfonium salt compound generates an acid upon irradiation with one of an actinic ray and a radiation.
Positive resist composition for immersion exposure and method of pattern formation with the same
申请人:Kodama Kunihiko
公开号:US20050186505A1
公开(公告)日:2005-08-25
A positive resist composition for immersion exposure which comprises (A) a resin which enhances its solubility in an alkaline developer by the action of an acid and (B) at least one compound which generates an acid upon irradiation with an actinic ray or a radiation, the compound being selected from the following (Ba) to (Bc): (Ba) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, (Bb) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, and (Bc) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the anion part; and a method of pattern formation with the composition.