2-o-tolylsulfanyl-cyclohexanone | 23712-61-0

• 分子结构分类: 有机化合物 - 有机硫化合物 - 硫醚类
• 英文名称: 2-o-tolylsulfanyl-cyclohexanone
• 英文别名: 2-o-Tolylmercapto-cyclohexanon；2-[(2-Methylphenyl)sulfanyl]cyclohexan-1-one；2-(2-methylphenyl)sulfanylcyclohexan-1-one
• CAS: 23712-61-0
• 化学式: C₁₃H₁₆OS
• 分子量: 220.335
• InChiKey: BHHUFMPJGLVKIY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.5
• 重原子数：
  15
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.46
• 拓扑面积：
  42.4
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Novel onium salts, photoacid generators, resist compositions, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20020076643A1

  公开（公告）日：2002-06-20

  Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

  芳基磺酸氧基萘磺酸盐的离子（离子包括碘离子或亚磺酸盐阳离子）是新颖的。 化学增感抗蚀剂组合物包括该离子盐作为光酸发生剂，适用于微细加工，特别是深紫外光刻，因为具有许多优点，包括提高分辨率，提高焦距范围，即使在长期PED上也能最小化线宽变化或形状退化，涂层、显影和剥离后最小化残留物，并在显影后改善图案轮廓。
• Onium salts, photoacid generators for resist compositions, and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：EP1077391A1

  公开（公告）日：2001-02-21

  Onium salts of the formula (1) are novel. R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q = 5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and "a" is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.

  式（1）的铌盐是新颖的。 R1是C1-10烷基或C6-14芳基，R2是H或C1-6烷基，p是1至5的整数，q是0至4的整数，p+q=5，R3是C1-10烷基或C6-14芳基，M是硫或碘原子，"a "等于3或2。由作为光酸发生器的鎓盐组成的化学放大型抗蚀剂组合物适用于微细加工，特别是深紫外光刻，因为它具有许多优点，包括提高了分辨率，即使在长期的 PED 上也能最大限度地减少线宽变化或形状退化，最大限度地减少涂布、显影和剥离后的缺陷，以及改善显影后的图案轮廓。