4,4-二甲基二氢-2H-吡喃-3(4H)-酮 | 133871-97-3

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 氧烷类
• 中文名称: 4,4-二甲基二氢-2H-吡喃-3(4H)-酮
• 英文名称: 4,4-Dimethyltetrahydropyran-3-one
• 英文别名: 4,4-dimethyldihydro-2H-pyran-3(4H)-one；4,4-dimethyloxan-3-one
• CAS: 133871-97-3
• 化学式: C₇H₁₂O₂
• 分子量: 128.171
• InChiKey: ZCQRVIWULDVTSJ-UHFFFAOYSA-N

物化性质

• 沸点：
  184.5±33.0 °C(Predicted)
• 密度：
  0.967±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0.9
• 重原子数：
  9
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  4,4-dimethyltetrahydro-2H-pyran-2-ol 在 对甲苯磺酸 、 间氯过氧苯甲酸 作用下， 反应 1.0h， 生成 4,4-二甲基二氢-2H-吡喃-3(4H)-酮
  参考文献：
  名称：

  Chemistry of dioxiranes. 18. Deuterium isotope effects in the reaction of 4,4-dimethyldihydropyran with dimethyldioxirane

  摘要：

  The reaction of dimethyldioxirane (1) with 4,4-dimethyl-2,3-dihydro-gamma-pyran (2) gives the derived epoxide. Measured secondary deuterium isotope effects indicate that there is a greater degree of rehybridization at the beta position (5-carbon) than at the alpha position (6-carbon) in the transition state leading to epoxide. The results are compared to those reported earlier in which 2 was oxidized by singlet oxygen to give the dioxetane.

  DOI：

  10.1021/jo00011a043

文献信息

• Fluorine-Containing Sulfonate Resin, Resist Composition and Pattern Formation Method
  申请人：KATO Misugi

  公开号：US20120322006A1

  公开（公告）日：2012-12-20

  A sulfonate resin according to the present invention has a repeating unit of the following general formula (3): where X each independently represents a hydrogen atom or a fluorine atom; n represents an integer of 1 to 10; R represents a hydrogen atom, a halogen atom or a C 1 -C 3 alkyl or fluorine-containing alkyl group; J represents a divalent linking group; and M + represents a monovalent cation. This sulfonate resin contains a sulfonic acid onium salt in a side chain thereof, with an anion moiety of the sulfonic acid onium salt fixed to the sulfonate resin, and thus functions as a resist resin with good resist characteristics such as DOF, LER, sensitivity and resolution.

  根据本发明，磺酸盐树脂具有以下通用公式（3）的重复单元：其中X分别表示氢原子或氟原子；n表示1至10的整数；R表示氢原子、卤原子或C1-C3烷基或含氟烷基团；J表示二价连接基团；M+表示一价阳离子。这种磺酸盐树脂在侧链中含有磺酸盐鉮盐，磺酸盐鉮盐的阴离子部分固定在磺酸盐树脂上，因此作为具有良好抗性特性（如DOF、LER、灵敏度和分辨率）的抗性树脂。
• Top Coating Composition
  申请人：Maeda Kazuhiko

  公开号：US20120040294A1

  公开（公告）日：2012-02-16

  Disclosed is a top coating composition formed on a resist film, for protecting the resist film, the top coating composition being a top coating composition for photoresist, characterized by containing a fluorine-containing polymer having a repeating unit represented by the following general formula (1). This composition is capable of controlling developing solution solubility and has a high water repellency. [In the formula, R 1 represents a hydrogen atom, fluorine atom, methyl group or trifluoromethyl group, R 2 represents a heat-labile protecting group, R 3 represents a fluorine atom or fluorine-containing alkyl group, and W is a bivalent linking group.]

  本发明公开了一种用于保护光阻膜的顶层涂层组合物，该顶层涂层组合物是一种用于光刻胶的顶层涂层组合物，其特征在于包含具有以下一般式（1）所表示的重复单元的含氟聚合物。该组合物能够控制显影液的溶解性，并具有高度的防水性。[在公式中，R1表示氢原子、氟原子、甲基基团或三氟甲基基团，R2表示热敏保护基团，R3表示氟原子或含氟烷基团，W是双价连接基团。]
• Novel Sulfonic Acid Salt and Derivative Thereof, Photoacid Generator Agent, and Resist Material and Pattern Formation Method Using the Photoacid Generator Agent
  申请人：Maeda Kazuhiko

  公开号：US20100304303A1

  公开（公告）日：2010-12-02

  Disclosed is a fluorinated sulfonic acid salt or fluorinated sulfonic acid group-containing compound having a structure represented by the following general formula (A). In the formula, n indicates an integer of 1 to 10; R indicates a substituted or unsubstituted C 1 -C 20 linear, branched or cyclic alkyl group, a substituted or unsubstituted C 1 -C 20 linear, branched or cyclic alkenyl group, a substituted or unsubstituted C 6 -C 15 aryl group, or a C 4 -C 15 heteroaryl group; and a indicates 1 or 0. A photoacid generator containing the above fluorinated sulfonic acid salt or fluorinated sulfonic acid group-containing compound shows high sensitivity to an ArF excimer laser or the like, presents no concerns about human body accumulation, can generate an acid (photoacid) of sufficiently high acidity, and exhibits high solubility in a resist solvent and good compatibility with a resist resin.

  本发明揭示了一种含有以下通式（A）所表示的结构的氟磺酸盐或含氟磺酸基的化合物。在公式中，n表示1到10的整数；R表示取代或未取代的C1-C20线性、支链或环烷基，取代或未取代的C1-C20线性、支链或环烯基，取代或未取代的C6-C15芳基，或C4-C15杂环基；a表示1或0。含有上述氟磺酸盐或含氟磺酸基的光酸发生剂对ArF准分子激光等具有高灵敏度，不存在人体积累的问题，能够产生足够高酸度的酸（光酸），并且在抗蚀剂溶剂中具有高溶解度和良好的与抗蚀树脂的相容性。
• MURRAY, ROBERT W.;SHIANG, DAWN L.;SINGH, MEGH, J. ORG. CHEM., 56,(1991) N1, C. 3677-3682
  作者：MURRAY, ROBERT W.、SHIANG, DAWN L.、SINGH, MEGH

  DOI：——

  日期：——
• US8283106B2
  申请人：——

  公开号：US8283106B2

  公开（公告）日：2012-10-09