萘并[2,3- b:6,7- b ']二噻吩二酰亚胺(NDTI)的分子修饰是通过在其上引入对电子不足的取代基如对-(三氟甲基)苯基-,5-嘧啶基和氯基进行的考察了噻吩的α位,以开发出用于有机薄膜晶体管(OTFT)的优质n沟道有机半导体。在新开发的NDTI衍生物中,N,N'-二辛基-2,7-二氯-NDTI(5)被认为是优于N,N'-二辛基-NDTI(1a)的半导体。基于5的OTFT显示出的电子迁移率高达0.73 cm 2 V –1s –1,而基于α-未取代1a的OTFT的迁移率为0.05 cm 2 V –1 s –1。通过引入氯基团改善的迁移率可以通过固态的电子结构来解释。与通过单晶X射线分析和理论计算阐明的1a的一维(1D)电子结构相反,可以将5表征为二维(2D)砌砖结构,其中噻吩α处的氯基团-正离子起着至关重要的作用。中包装结构5,存在分子间带状阵列,该分子间带状阵列在π堆叠柱的并排方向
Naphthodithiophenediimide (NDTI): Synthesis, Structure, and Applications
摘要:
A straightforward synthesis of alpha,beta-unsubstituted and alpha-halogenated naphtho[2,3-b:6,7-b']-dithiophenediimides (NDTIs) is described. Electrochemical and optical studies of N,N-dioctyl-NDTI demonstrate that the compound has a low-lying LUMO energy level (4.0 eV below the vacuum level) and a small HOMO-LUMO gap (similar to 2.1 eV). With its interesting electronic and optical properties, in addition to its planar structure, NDTI is a promising building block for the development of novel pi-functional materials. In fact, it afforded n-channel, p-channel, and ambipolar materials, depending on the molecular modification.