Photoelectric conversion element, imaging element, optical sensor comprising a photoelectric conversion film containing a predetermined compound, and compound
申请人:FUJIFILM Corporation
公开号:US11171165B2
公开(公告)日:2021-11-09
The present invention provides a photoelectric conversion element including a photoelectric conversion film having a narrow half-width of absorption peak and an excellent photoelectric conversion efficiency, and an imaging element, an optical sensor, and a compound. The photoelectric conversion element according to the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).
PHOTOELECTRIC CONVERSION ELEMENT, IMAGING ELEMENT, OPTICAL SENSOR, AND COMPOUND
申请人:FUJIFILM Corporation
公开号:US20210135121A1
公开(公告)日:2021-05-06
A first object of the present invention is to provide a photoelectric conversion element which includes a photoelectric conversion film having a narrow half-width of an absorption peak and has excellent heat resistance. Moreover, a second object of the present invention is to provide an imaging element and an optical sensor. Furthermore, a third object of the present invention is to provide a novel compound.
A photoelectric conversion element according to the embodiment of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).
COMPOUND AND THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
申请人:Samsung Electronics Co., Ltd.
公开号:US20220416173A1
公开(公告)日:2022-12-29
Disclosed are a compound represented by Chemical Formula 1A or 1B, an organic thin film including the same, a thin film transistor, and an electronic device.
In Chemical Formulae 1A and 1B, X
1
, X
2
, R
1
to R
4
, and n1 are the same as described in the detailed description.
Synthesis, Physical Properties, and Field-Effect Mobility of Isomerically Pure <i>syn</i>-/<i>anti</i>-Anthradithiophene Derivatives
Isomerically pure syn-/anti-isomers of 2,8-dimethylanthradithiophene (DMADT) were synthesized in five steps and characterized using thermogravimetry, X-ray single crystal analysis, UV–vis absorption, and electrochemical measurements. The physicalproperties in solution were slightly different for each isomer, whereby the more obvious differences were observed in the solid state. A field-effect transistor