It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time.
The present invention relates to a cleaning agent for a substrate having a metal wiring, comprising an aqueous solution containing (A) carboxylic acid having a nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine, and having a pH of 10 or higher, as well as a cleaning method for a semiconductor substrate, comprising that the cleaning agent is used.
本发明的目的是提供一种用于具有
金属配线的基板的清洗剂,以及一种半导体基板的清洗方法,包括在半导体器件制造工艺中
化学机械抛光(
CMP)后的清洗工序中使用该清洗剂,从而获得以下效果(1)至(5)。(1) 可以充分去除
CMP 工序中使用的细颗粒(抛光剂)残留物、抛光
金属产生的细颗粒(
金属颗粒)、
防腐剂等。(2) 可以充分去除(剥离)
金属布线表面的涂膜(保护膜:抗氧化膜),该涂膜含有在
CMP 工艺中形成的
防腐剂(如苯并三唑或
喹啉二酸)与
金属布线表面
金属之间的络合物。(3) 在去除(剥离)涂膜后,可形成含有金属氧化物的氧化膜。(4) 即使在
CMP 后的清洗工序后离开基板,也能长期稳定地获得半导体基板,而不会影响
金属布线表面(含有金属氧化物的氧化膜表面)的平整度。(5) 即使长期使用该清洗剂也不易变质。
本发明涉及一种用于具有
金属配线的衬底的清洗剂,包括含有(A)具有含氮杂环的
羧酸和(B)烷基
羟胺且 pH 值为 10 或更高的
水溶液,以及一种半导体衬底的清洗方法,其中包括使用该清洗剂。