Investigation of Indium Phosphide Quantum Dot Nucleation and Growth Utilizing Triarylsilylphosphine Precursors
作者:Dylan C. Gary、Benjamin A. Glassy、Brandi M. Cossairt
DOI:10.1021/cm500102q
日期:2014.2.25
each precursor in the synthesis of indium phosphide (InP) quantum dots (QDs). This approach was allowed by the exploration of the synthesis and reactivity of a series of sterically encumbered triarylsilylphosphines substituted at the para position of the aryl group, P(Si(C6H4-X)3)3 (X = H, Me, CF3, or Cl), as a contrast to P(SiMe3)3, the P3– source commonly employed in such syntheses. UV–vis absorption