Thio(di)silanes comprising a thiosilane of formula (A): (R
1a
R
1b
R
1c
CS)
s
(Si)X
x
H
h
(A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R
1a
R
1b
R
1c
CS)
s
(R
2
2
N)(Si—Si)X
x
H
h
(I) wherein subscript s is from 1 to 6, and wherein R
1a
, R
1b
, R
1c
, R
2
, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.
含有
化学式(A)的
硫代
硅烷类化合物:(R1aR1bR1cCS)s(Si)XxHh(A),其中下标s为2至4,或者含有
化学式(I)的
硫代
硅烷类化合物:(R1aR1bR1cCS)s(
R22N)(Si—Si)XxHh(I),其中下标s为1至6,其中R1a、R1b、R1c、R2、X和下标n、x和h在此定义。还包括含有相同成分的组合物,制备和使用方法,合成中有用的中间体,以及由此制备的薄膜和材料。