The present invention relates to zinc amide bases of the general formula (I)
(R
1
R
2
N)
2
—Zn.
a
MgX
1
2
.b
LiX
2
(I)
wherein R
1
and R
2
are each independently selected from substituted or unsubstituted, linear or branched alkyl, alkenyl, alkynyl or silyl derivatives thereof, and substituted or unsubstituted aryl or heteroaryl, and wherein R
1
and R
2
can form together a ring structure, or R
1
and/or R
2
can be part of a polymer structure; X
1
2
is a divalent anion or two monovalent anions that are independent from each other; X
2
is a monovalent anion; a is >0; and b is >0. The zinc amide bases can be used, amongst other things, for deprotonation and metallization of aromatics.
[DE] BISAMID-ZINKBASEN<br/>[EN] BISAMIDE-ZINC BASES<br/>[FR] BASES DE BISAMIDE-ZINC
申请人:UNIV MUENCHEN L MAXIMILIANS
公开号:WO2008138946A1
公开(公告)日:2008-11-20
[EN] The invention relates to zinc amide bases of general formula (R1R2N)2-Zn aMgX1 [FR] L'invention concerne des bases de zinc-amide, de formule générale (R1R2N)2-Zn aMgX1 [DE] Die vorliegende Erfindung betrifft Zinkamid-Basen der allgemeinen Formel (R1R2N)2-Zn aMgX1
(tmp)2Zn⋅2 MgCl2⋅2 LiCl: A Chemoselective Base for the Directed Zincation of Sensitive Arenes and Heteroarenes