4-(二苯基膦)二苯并噻吩 | 91281-15-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 4-(二苯基膦)二苯并噻吩
• 英文名称: 4-(Diphenylphosphino)dibenzothiophene
• 英文别名: 4-diphenylphosphinodibenzothiophene；Phosphine, 4-dibenzothienyldiphenyl-；dibenzothiophen-4-yl(diphenyl)phosphane
• CAS: 91281-15-1
• 化学式: C₂₄H₁₇PS
• 分子量: 368.439
• InChiKey: SGLBBZHGKJKADW-UHFFFAOYSA-N

物化性质

• 沸点：
  521.8±23.0 °C(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  7
• 重原子数：
  26
• 可旋转键数：
  3
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  28.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  4-(二苯基膦)二苯并噻吩 在 双氧水 作用下， 以 二氯甲烷 为溶剂， 反应 4.0h， 以2.3 g的产率得到4-diphenylphosphoryl dibenzothiophene
  参考文献：
  名称：

  Short-Axis Substitution Approach Selectively Optimizes Electrical Properties of Dibenzothiophene-Based Phosphine Oxide Hosts

  摘要：

  Two dibenzothiophene (DBT)-based phosphine oxide hosts, named 4-diphenylphosphoryl dibenzothiophene (DBTSPO) and 4,6-bis(diphenylphosphoryl) dibenzothiophene (DBTDPO), were prepared by short-axis substitution with the aim to selectively adjust electrical properties. The combined effects of short-axis substitution and the involvement of electron-donating S atom in conjugation effectively suppress the influence of electron-withdrawing diphenylphosphine oxide (DPPO) moieties on the frontier molecular orbitals and the optical properties. Therefore, DBTSPO and DBTDPO have the nearly same hole injection ability and the excited energy levels, while more electron transporting DPPOs and the symmetrical configuration endow DBTDPO with enhanced electron-injecting/transporting ability. As the result, on the basis of this short-axis substitution effect, the selective adjustment of electrical properties was successfully realized. With the high first triplet energy level (T-1) of 290 eV, the suitable energy levels of the highest occupied molecular orbital and the lowest unoccupied molecular orbital of -6.05 and -2.50 eV and the improved carrier -transporting ability, DBTDPO supported its blue- and white emitting phosphorescent organic light emitting diodes as the best low-voltage-driving devices reported so far with the lowest driving voltages of 2.4 V for onset and <3.2 V at 1000 cd m(-2) (for indoor lighting) accompanied with the high efficiencies of >30 lm W-1 and excellent efficiency stability.

  DOI：

  10.1021/ja308273y
• 作为产物：
  描述：

  二苯并噻吩 在 正丁基锂 作用下， 生成 4-(二苯基膦)二苯并噻吩
  参考文献：
  名称：

  Synthesis and structure of a stable complex featuring an S-bound dibenzothiophene ligand: RuCl2(4-R2PDBT)2 (DBT = dibenzothiophene)

  摘要：

  DOI：

  10.1021/ja00330a073

文献信息

• Haenel, Matthias W.; Jakubik, Dieter; Rothenberger, Eveline, Chemische Berichte, 1991, vol. 124, # 8, p. 1705 - 1710
  作者：Haenel, Matthias W.、Jakubik, Dieter、Rothenberger, Eveline、Schroth, Gerhard

  DOI：——

  日期：——
• Robinson, P. D.; Dunkerton, L. V.; Pandey, A., Acta Crystallographica, Section C: Crystal Structure Communications, 1989, vol. 45, p. 587 - 591
  作者：Robinson, P. D.、Dunkerton, L. V.、Pandey, A.、Hinckley, C. C.

  DOI：——

  日期：——
• US7172986B2
  申请人：——

  公开号：US7172986B2

  公开（公告）日：2007-02-06
• US7199074B2
  申请人：——

  公开号：US7199074B2

  公开（公告）日：2007-04-03
• Short-Axis Substitution Approach Selectively Optimizes Electrical Properties of Dibenzothiophene-Based Phosphine Oxide Hosts
  作者：Chunmiao Han、Zhensong Zhang、Hui Xu、Shouzhen Yue、Jing Li、Pingrui Yan、Zhaopeng Deng、Yi Zhao、Pengfei Yan、Shiyong Liu

  DOI：10.1021/ja308273y

  日期：2012.11.21

  Two dibenzothiophene (DBT)-based phosphine oxide hosts, named 4-diphenylphosphoryl dibenzothiophene (DBTSPO) and 4,6-bis(diphenylphosphoryl) dibenzothiophene (DBTDPO), were prepared by short-axis substitution with the aim to selectively adjust electrical properties. The combined effects of short-axis substitution and the involvement of electron-donating S atom in conjugation effectively suppress the influence of electron-withdrawing diphenylphosphine oxide (DPPO) moieties on the frontier molecular orbitals and the optical properties. Therefore, DBTSPO and DBTDPO have the nearly same hole injection ability and the excited energy levels, while more electron transporting DPPOs and the symmetrical configuration endow DBTDPO with enhanced electron-injecting/transporting ability. As the result, on the basis of this short-axis substitution effect, the selective adjustment of electrical properties was successfully realized. With the high first triplet energy level (T-1) of 290 eV, the suitable energy levels of the highest occupied molecular orbital and the lowest unoccupied molecular orbital of -6.05 and -2.50 eV and the improved carrier -transporting ability, DBTDPO supported its blue- and white emitting phosphorescent organic light emitting diodes as the best low-voltage-driving devices reported so far with the lowest driving voltages of 2.4 V for onset and <3.2 V at 1000 cd m(-2) (for indoor lighting) accompanied with the high efficiencies of >30 lm W-1 and excellent efficiency stability.