SILICON CHALCOGENATE PRECURSORS, METHODS OF FORMING THE SILICON CHALCOGENATE PRECURSORS, AND RELATED METHODS OF FORMING SILICON NITRIDE AND SEMICONDUCTOR STRUCTURES
申请人:Micro Technology, Inc.
公开号:US20180025906A1
公开(公告)日:2018-01-25
A silicon chalcogenate precursor comprising the chemical formula of Si(XR
1
)
n
R
2
4-n
, where X is sulfur, selenium, or tellurium, R
1
is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R
2
is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.
硅硫族前体,其
化学式为Si(XR1)nR24-n,其中X为
硫、
硒或
碲,R1为氢、烷基、取代烷基、烷氧基、取代烷氧基、酰胺基、取代酰胺基、胺基、取代胺基或卤素基,每个R2独立地为氢、烷基、取代烷基、烷氧基、取代烷氧基、酰胺基、取代酰胺基、胺基、取代胺基或卤素基,n为1、2、3或4。还公开了形成
硅硫族前体、形成
硅氮化物和形成半导体结构的方法。