N-(1H-benzotriazol-5-yl)acetamide | 957494-31-4

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并三唑类
• 英文名称: N-(1H-benzotriazol-5-yl)acetamide
• 英文别名: N-methyl-1H-1,2,3-benzotriazole-5-carboxamide；N-methyl-2H-benzotriazole-5-carboxamide
• CAS: 957494-31-4
• 化学式: C₈H₈N₄O
• mdl: MFCD19596555
• 分子量: 176.178
• InChiKey: FQVIETWSZAGFSK-UHFFFAOYSA-N

物化性质

• 密度：
  1.369±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0.3
• 重原子数：
  13
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.125
• 拓扑面积：
  70.7
• 氢给体数：
  2
• 氢受体数：
  3

文献信息

• Cleaning agent for semiconductor device and cleaning method using the same
  申请人：FUJIFILM Corporation

  公开号：EP2045318A1

  公开（公告）日：2009-04-08

  The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I):         X1-L-X2     formula (I) wherein, in formula (I), X1 and X2 each independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group; and provides a cleaning method using the cleaning agent.

  本发明提供了一种清洁剂，用于在半导体器件的生产过程中经过化学机械抛光工序后清洁表面有铜线的半导体器件，包括由下式(I)表示的化合物： X1-L-X2 式（I） 其中，在式(I)中，X1 和 X2 各自独立地代表通过从含有至少一个氮原子的杂环中移除一个氢原子而形成的一价取代基，L 代表二价连接基团；并提供一种使用该清洗剂的清洗方法。
• CLEANING AGENT FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD USING THE SAME
  申请人：NISHIWAKI Yoshinori

  公开号：US20090088361A1

  公开（公告）日：2009-04-02

  The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I): X 1 -L—X 2 formula (I) wherein, in formula (I), X 1 and X 2 each independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group; and provides a cleaning method using the cleaning agent.
• MOLECULAR DYE FOR SPECTROSCOPY
  申请人：Gilbert Richard

  公开号：US20090097023A1

  公开（公告）日：2009-04-16

  A method of detecting the presence, absence or quantity of a dye in a sample in a reaction region is provided, comprising the steps of providing a dye comprising a ligand ion complex, the ligand having a lowest unoccupied electron level and the ion having an excited electron level, the lowest unoccupied electron level of the ligand having an energy level such that an electron in the excited electron level of the ion may transfer non radiatively to the lowest unoccupied electron level of the ligand, the complex having a ground state electron level; illuminating the dye with a specified wavelength of radiation to detect the presence, absence or quantity of dye; detecting radiation from the illuminated dye; wherein the electron levels of the complex and the wavelength of the radiation are arranged such that electrons in the ground state are promoted to an excited state by photon absorption and it is energetically favourable for electrons to transfer to the lowest unoccupied electron level of the ligand from the excited electron level of the ion and undergo non-radiative relaxation via a thermally accessible electron level between the ground state electron level of the complex and the excited electron level of the ion to the ground state electron level.
• Metal polishing slurry and chemical mechanical polishing method
  申请人：Yoshikawa Masaru

  公开号：US20100075500A1

  公开（公告）日：2010-03-25

  The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X 1 ) n -L wherein X 1 represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X 1 s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).