2-p-Tolyl-norborneol-(2) | 78195-91-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-p-Tolyl-norborneol-(2)
• 英文别名: 2-p-Tolyl-2-endo-norbornanol；2-(4-Methylphenyl)bicyclo[2.2.1]heptan-2-ol
• CAS: 78195-91-2
• 化学式: C₁₄H₁₈O
• 分子量: 202.296
• InChiKey: WLQZIUJCVWFUJU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  15
• 可旋转键数：
  1
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.57
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  降樟脑 、 对甲苯基溴化镁 生成 2-p-Tolyl-norborneol-(2)
  参考文献：
  名称：

  Proton nuclear magnetic resonance study of 2-aryl-2-norbornyl cations. Onset of nonclassical stabilization

  摘要：

  DOI：

  10.1021/ja00823a025

文献信息

• BICYCLO-HEPTAN-2-AMINES
  申请人：Adejare Adeboye

  公开号：US20120190710A1

  公开（公告）日：2012-07-26

  The present invention provides bicyclo-heptan-2-amines that selectively bind to the sigma-2 receptor and are useful in the treatment of diseases related to the sigma-2 receptor, for example, cancer and neurological disorders.

  本发明提供了选择性结合sigma-2受体的双环庚烷-2-胺类化合物，该化合物可用于治疗与sigma-2受体有关的疾病，例如癌症和神经系统疾病。
• Polymer, negative resist composition, and pattern forming process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10377842B2

  公开（公告）日：2019-08-13

  A polymer comprising recurring units derived from vinylanthraquinone, recurring units containing a benzene ring having a hydroxyl-bearing tertiary alkyl group bonded thereto, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a negative resist composition having a high resolution and minimal LER.

  本发明提供了一种聚合物，它包含由乙烯基蒽醌衍生的递归单元、含有苯环的递归单元（苯环上键合有含羟基的叔烷基）以及由羟基苯乙烯衍生的递归单元。这种聚合物可用作基础树脂，配制出具有高分辨率和最小 LER 的负向抗蚀剂组合物。
• SILICON-CONTAINING CONDENSATE, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170154766A1

  公开（公告）日：2017-06-01

  The present invention provides a silicon-containing condensate comprising one or more repeating units selected from a repeating unit shown by the following general formula (A1), a repeating unit shown by the following general formula (A2), and a repeating unit shown by the following general formula (A3), wherein R 1 represents a group shown by the following general formula (A-1) or (A-2); R 2 and R 3 each independently represent the same group as R 1 , a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms other than R 1 . There can be provided a silicon-containing condensate to give a composition for forming a silicon-containing resist under layer film which can form a resist under layer film with good adhesiveness to any resist pattern, whether the pattern is formed by negative development or positive development.
• POLYMER, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170355795A1

  公开（公告）日：2017-12-14

  A polymer comprising recurring units derived from vinylanthraquinone, recurring units containing a benzene ring having a hydroxyl-bearing tertiary alkyl group bonded thereto, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a negative resist composition having a high resolution and minimal LER.
• US8735590B2
  申请人：——

  公开号：US8735590B2

  公开（公告）日：2014-05-27