3-methoxy-4-(4'-toluenesulfonyloxy)benzenesulfonic acid | 792900-09-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 3-methoxy-4-(4'-toluenesulfonyloxy)benzenesulfonic acid
• 英文别名: 3-Methoxy-4-(4-methylphenyl)sulfonyloxybenzenesulfonic acid
• CAS: 792900-09-5
• 化学式: C₁₄H₁₄O₇S₂
• 分子量: 358.393
• InChiKey: KLMWZSQSHBZKJH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.1
• 重原子数：
  23
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.14
• 拓扑面积：
  124
• 氢给体数：
  1
• 氢受体数：
  7

文献信息

• Novel onium salts, photoacid generators, resist compositions, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20020077493A1

  公开（公告）日：2002-06-20

  Onium salts of arylsulfonyloxybenzenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

  芳基磺酸氧苯磺酸盐的离子与碘化铵或亚砜铵阳离子的醇盐是新颖的。包含这种醇盐作为光酸发生剂的化学增强型光阻组合物适用于微细加工，特别是深紫外光刻，因为具有许多优点，包括改善分辨率，改善焦点纬度，即使在长期PED时也最小化线宽变化或形状退化，涂层、开发和剥离后最小化碎屑，以及开发后改善图案轮廓。
• Photoacid generators, chemically amplified resist compositions, and patterning process
  申请人：——

  公开号：US20030215738A1

  公开（公告）日：2003-11-20

  Photoacid generators are provided by O-arylsulfonyl-oxime compounds having formula (1) wherein R is H, F, Cl, NO 2 , alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is 0 to 4, r′ is 0 to 5, k is 0 to 4, and G′ and G″ are S or —CH═CH—. Chemically amplified resist compositions comprising the photoacid generators have many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, and improved pattern profile after development. Because of high resolution, the compositions are suited for microfabrication, especially by deep UV lithography. 1

  提供光酸发生剂的是具有公式（1）的O-芳基磺酰基肟化合物，其中R为H，F，Cl，NO2，烷基或烷氧基，n为0或1，m为1或2，r为0至4，r'为0至5，k为0至4，G'和G"为S或—CH═CH—。包含光酸发生剂的化学增强型抗蚀剂组合物具有许多优点，包括改善分辨率、改善焦点宽度、即使在长期PED上也最小化线宽变化或形状退化，并且在显影后改善图案轮廓。由于具有高分辨率，这些组合物适用于微细制造，特别是通过深紫外光刻。
• US6916591B2
  申请人：——

  公开号：US6916591B2

  公开（公告）日：2005-07-12