Method for the formation of silica film, silica film, insulating film, and semiconductor device
申请人:JSR Corporation
公开号:EP1267395A2
公开(公告)日:2002-12-18
A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500°C and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.
In this work, a new method to prepare fluorinated coatings with mechanical properties enhanced has been developed. Pyridinium, imidazolium, and phosphonium ionic liquids have been synthesized and used as new synthetic building blocks in a polytetrafluoroethylene matrix. The strategy demonstrated using long alkyl chain cations provides an opportunity to prepare nanomaterials with a nanoscale structuration. The design of these new ionic and nanostructured materials is very dependent on the cation anion combination of ILs. The morphology analyzed by transmission electronic microscopy (TEM) shows that it is clearly tuned by the chemical nature of ILs. The finest structuration leads to a dramatic compromise between stiffness and deformation of material. The small-angle X-Ray scattering (SAXS) shows the evolution of the ionic networks during the mechanical sollicitation. (C) 2011 Elsevier Ltd. All rights reserved.
KARLIVAN, G. A.;VALTER, R. EH.;NEJLAND, O. YA., IZV. AN LATVSSR. CEP. XIM.,(1989) N, S. 584-590