Semiconducting 2,6,9,10-Tetrakis(phenylethynyl)anthracene Derivatives: Effect of Substitution Positions on Molecular Energies
作者:Jung A Hur†、Suk Young Bae、Kyung Hwan Kim、Tae Wan Lee、Min Ju Cho、Dong Hoon Choi
DOI:10.1021/ol200299s
日期:2011.4.15
10-bis(phenylethynyl)anthracene, 4, and 9,10-bis((4-hexylphenyl)ethynyl)-2,6-bis (phenyl ethynyl)anthracene, 5, have been synthesized to study their electronic and photophysical properties. It should be noted that the difference between these compounds is the substitution position of 1-ethynyl-4-hexylbenzene groups into an anthracene ring. In particular, substitution in the 9,10-positions of the anthracene ring enhanced
2,6-双(((4-己基苯基)乙炔基)-9,10-双(苯基乙炔基)蒽,4和9,10-双((4-己基苯基)乙炔基)-2,6-双(苯基乙炔基)蒽5已被合成来研究其电子和光物理性质。应该注意的是,这些化合物之间的区别是1-乙炔基-4-己基苯基在蒽环中的取代位置。特别地,在蒽环的9,10位上的取代增强了J聚集的分子间相互作用。由于5具有较低的带隙能量和更紧凑的膜形态,因此在薄膜晶体管器件中它具有较高的空穴迁移率(〜0.27 cm 2 V -1 s -1)。