tetraphenylphosphonium salicylate | 227175-66-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: tetraphenylphosphonium salicylate
• 英文别名: 2-Carboxyphenolate;tetraphenylphosphanium
• CAS: 227175-66-8
• 化学式: C₇H₅O₃*C₂₄H₂₀P
• 分子量: 476.511
• InChiKey: SNGACBPZDFCZBM-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  4.76
• 重原子数：
  35
• 可旋转键数：
  5
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  60.4
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  pentaphenylphosphorane 、 水杨酸 以 苯 为溶剂， 反应 0.17h， 以83%的产率得到tetraphenylphosphonium salicylate
  参考文献：
  名称：

  Tetraphenylphosphonium carboxylates and sulfonates. Synthesis and structure

  摘要：

  The reaction of the pentaphenyphosphorus solvate Ph5P center dot 1/2PhH (I) with carboxylic and sulfonic acids was used to synthesize tetraphenylphosphonium carboxylates Ph4POC(O)R, R = C6H4(2-OH) (II), C6H4 (2-COOH) (III), H (IV), Me (V), CCl3 (VI), Ph (VII), PhCH=CH (VIII), CH2CH2C(O)OH (IX), CH=CHC(O) OH(X), and CH2C(O)OH (XI) and tetraphenylphosphonium sulfonates Ph4POSO2Ar, Ar = Ph (XII), C6H4Me4 (XIII), and C6H3(-COOH)(4-OH) (XIV). Compound XII was also prepared from compound I and SO3 in benzene. According to X-ray diffraction data, the crystals of I contain two types of crystallographically independent molecules with a slightly distorted trigonal-bipyramidal configuration [Ia, CaxPCax 178.44(8)A degrees, P- C-ax 1.985(2), 1.987(2) A..., P-C-eq 1.854(2), 1.846(2), 1.840(2) A...; Ib, CaxPCax 178.45(9)A degrees, P-C-ax 1.980(2), 1.975 (2) A..., P-C-eq 1.840(2), 1.846(2), 1.854(2) A...]. In the cations of compounds II, III and XIV, the coordination of the phosphorus atom is tetrahedral [CPC angle: II, 106.2(2)-111.6(1)A degrees; III, 104.01(6)-113.03(6)A degrees; XIV, 107.54 (6)-112.79(6)A degrees]; the anions contain intramolecular O-Ha <-O hydrogen bonds between the hydroxyl hydrogen atom and carboxyl oxygen atom (II, 1.34; III, 1.23; and XIV, 1.83 A...).

  DOI：

  10.1134/s1070363209010125

文献信息

• THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3657254A1

  公开（公告）日：2020-05-27

  The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

  本发明是一种热固性含硅材料，它含有一个或多个如下通式（Sx-1）所示的重复单元、如下通式（Sx-2）所示的重复单元和如下通式（Sx-3）所示的部分结构： 其中 R1 代表含碘有机基团；R2 和 R3 各自独立地与 R1、氢原子或具有 1 至 30 个碳原子的一价有机基团相同。本发明提供了：一种用于形成抗蚀剂底层薄膜的含硅热固性材料，该材料能够有助于提高上层抗蚀剂的灵敏度，同时使其低功耗不降低；一种用于形成含硅抗蚀剂底层薄膜的组合物，该组合物含有该含硅热固性材料；以及一种使用该组合物的图案化工艺。
• THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3680275A1

  公开（公告）日：2020-07-15

  A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

  热固性含硅化合物包含一个或多个结构单元，结构单元的通式如下（Sx-1）、（Sx-2）和（Sx-3）： 其中，R1 代表一个一价有机基团，该基团包含一个可选具有取代基的苯基和一个具有 3 至 10 个碳原子的非芳香环；R2、R3 分别代表 R1 或一个具有 1 至 30 个碳原子的一价有机基团。因此，本发明提供了一种可用于含硅抗蚀剂底层薄膜材料的热固性含硅化合物，该化合物能够实现既具有抗碱性显影剂性能又能在不含过氧化氢的碱性剥离液中提高溶解性的矛盾特性。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3686256A1

  公开（公告）日：2020-07-29

  A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents a divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R103 represents a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with a sulfur atom in the formula; and L104 represents a single bond or a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom. Thus, the present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed in a chemically amplified resist that uses an acid as a catalyst.

  一种用于形成含硅抗蚀剂底层薄膜的组合物至少包含：一种或多种如下通式所示的化合物（P-0）；以及一种可热交联的聚硅氧烷（Sx）、 其中 R100 代表被一个或多个氟原子取代的二价有机基团；R101 和 R102 各自独立地代表具有 1 至 20 个碳原子的线性、支链或环状一价烃基团，可选择被一个杂原子取代或被一个杂原子插入；R103 代表具有 1 至 20 个碳原子的线性、支链或环状二价烃基团，可选择被一个杂原子取代或被一个杂原子插入；R101 和 R102，或 R101 和 R103，可选地相互键合，以形成式中带有硫原子的环；以及 L104 代表单键或具有 1 至 20 个碳原子的线性、支链或环状二价烃基，可选地被杂原子取代或可选地被杂原子夹杂。因此，本发明提供了一种抗蚀剂底层薄膜，能够改善在使用酸作为催化剂的化学放大抗蚀剂中形成的精细图案的 LWR 和 CDU。
• METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3736632A1

  公开（公告）日：2020-11-11

  The present invention provides a method for measuring a distance of diffusion of a curing catalyst from a silicon-containing film to a resist upper layer film formed on the silicon-containing film. A method for measuring a distance of diffusion of a curing catalyst (Xc) for a thermosetting silicon-containing material (Sx) includes the steps of: forming a silicon-containing film (Sf) from a composition containing a thermosetting silicon-containing material (Sx), a curing catalyst (Xc) and a solvent (a); coating the silicon-containing film (Sf) with a photosensitive resin composition containing a resin (A) whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent (b), and subsequently heating to prepare a substrate on which the silicon-containing film (Sf) and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin (A) in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin (A).

  本发明提供了一种测量固化催化剂从含硅薄膜到形成在含硅薄膜上的抗蚀剂上层薄膜的扩散距离的方法。测量热固性含硅材料（Sx）的固化催化剂（Xc）扩散距离的方法包括以下步骤：用含有热固性含硅材料 (Sx)、固化催化剂 (Xc) 和溶剂 (a) 的组合物形成含硅薄膜 (Sf)；用含有树脂 (A) 的光敏树脂组合物涂覆含硅薄膜 (Sf)，树脂 (A) 在碱性显影剂中的溶解度在酸、酸发生剂和溶剂 (b) 的作用下会增加，然后加热制备基底，在基底上形成含硅薄膜 (Sf) 和树脂薄膜；用高能束或电子束照射基底以产生酸，并对基底进行热处理，通过酸在树脂膜中的作用提高树脂 (A) 在碱性显影剂中的溶解度；将树脂膜溶解在碱性显影剂中；以及测量剩余树脂 (A) 的膜厚。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP4020081A1

  公开（公告）日：2022-06-29

  The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a resist underlayer film having favorable adhesiveness to resist patterns regardless of whether in negative development or positive development, and also having favorable adhesiveness to finer patterns as in EUV photo-exposure; a patterning process; and a silicon compound.

  本发明是一种用于形成含硅光刻胶底层膜的组合物，其中含有一种或多种硅化合物（A-1）的水解产物和水解缩合物中的一种或两种，如下通式（1）所示。这就提供了：一种用于形成含硅抗蚀剂底层膜的组合物，使用该组合物可以形成抗蚀剂底层膜，无论在负显影还是正显影中，该抗蚀剂底层膜都对抗蚀剂图案具有良好的附着性，而且在超紫外光曝光中，该抗蚀剂底层膜还对更精细的图案具有良好的附着性；一种图案化工艺；以及一种硅化合物。