MATERIAL FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND FOR FORMING ORGANIC FILM
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20210311395A1
公开(公告)日:2021-10-07
A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where W
1
represents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and R
1
an alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.