2,4,6-trihydroxy-benzenesulfonic acid | 91147-79-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2,4,6-trihydroxy-benzenesulfonic acid
• 英文别名: 2,4,6-Trihydroxy-benzolsulfonsaeure；Phloroglucinsulfosaure；2,4,6-trihydroxybenzenesulfonic acid
• CAS: 91147-79-4
• 化学式: C₆H₆O₆S
• 分子量: 206.176
• InChiKey: JLYIGXJCYFBIJB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.7
• 重原子数：
  13
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  123
• 氢给体数：
  4
• 氢受体数：
  6

反应信息

• 作为产物：
  描述：

  间苯三酚 在 焦硫酸 作用下， 生成 2,4,6-trihydroxy-benzenesulfonic acid
  参考文献：
  名称：

  Schiff, Justus Liebigs Annalen der Chemie, 1875, vol. 178, p. 179

  摘要：

  DOI：

文献信息

• Polymeric acetal resins containing free radical inhibitors and their use in lithographic printing
  申请人：Kodak Polychrome Graphics GmbH

  公开号：EP1350801A1

  公开（公告）日：2003-10-08

  Polymeric acetal resins useful in lithographic printing are disclosed. The polymeric acetal resin contains units (A), (B), (C), (D), and (E). Unit (A) is a vinyl alcohol unit. Unit; (B) is a polyvinyl acetal unit containing an R group, where R is hydrogen, an aliphatic group, an aromatic group, or an arylaliphatic group. Unit (C) is a vinyl carboxylate unit. Unit (D) is an acidic vinyl acetal unit and/or a residue of an acidic vinyl monomer. Unit (E) is a free radical polymerization-inhibiting vinyl acetal unit and/or a free radical polymerization-inhibiting vinyl alcohol ester unit. The resin comprises about 10 to about 60 mol% of unit (A), about 5 to about 60 mol% of unit (B), about 0.3 to about 30 mol% of unit (C), about 1 to about 40 mol% of unit (D), and about 0.01 to about 2 mol% of unit (E).

  本发明公开了用于平版印刷的聚合缩醛树脂。聚合缩醛树脂包含单元 (A)、(B)、(C)、(D) 和 (E)。单元(A)是乙烯醇单元。单元(B)是含有 R 基团的聚乙烯醇缩醛单元，其中 R 是氢、脂肪族基团、芳香族基团或芳基脂肪族基团。单元（C）是乙烯基羧酸酯单元。单元（D）是酸性乙烯基缩醛单元和/或酸性乙烯基单体的残余物。单元（E）是自由基聚合抑制乙缩醛单元和/或自由基聚合抑制乙烯醇酯单元。该树脂包括约 10 至约 60 摩尔%的单元（A）、约 5 至约 60 摩尔%的单元（B）、约 0.3 至约 30 摩尔%的单元（C）、约 1 至约 40 摩尔%的单元（D）和约 0.01 至约 2 摩尔%的单元（E）。
• Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10613440B2

  公开（公告）日：2020-04-07

  A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R1aSi(R2)4-a  Formula (1) and compounds of Formula (2): R3cSi(R4)3-c2Yb  Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.

  一种用于 EUV 光刻的抗蚀剂底层成膜组合物，显示出良好的抗蚀剂形状；包括：作为硅烷的可水解有机硅烷、其水解产物或其水解缩合物；以及含有烃基的磺酸离子与鎓离子的盐。可水解有机硅烷包括至少一种选自式（1）化合物组成的组的有机硅化合物： R1aSi(R2)4-a 式(1) 和式 (2) 的化合物： R3cSi(R4)3-c2Yb 式 (2) 其水解产物，或其水解缩合物。一种制造半导体器件的方法，包括：在半导体衬底上形成有机底层膜；通过在有机底层膜上涂敷抗蚀剂底层膜成膜组合物，然后烘烤涂敷的抗蚀剂底层膜成膜组合物，形成抗蚀剂底层膜；通过在抗蚀剂底层膜上涂敷超紫外抗蚀剂组合物，形成抗蚀剂膜；对抗蚀剂膜进行超紫外曝光；以及通过显影曝光的抗蚀剂膜，获得抗蚀剂图案。
• CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
  申请人：Carter K. Melvin

  公开号：US20050090109A1

  公开（公告）日：2005-04-28

  The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly relates to a method of polishing substrates comprising copper, tungsten, titanium, and/or polysilicon using a chemical-mechanical polishing system comprising organosulfonic acids having an electrochemical oxidation potential greater than 0.2V as an oxidizer.

  本发明涉及使用磨料和流体组合物对基底进行化学机械抛光，其中使用某些有机磺酸化合物作为氧化剂，特别是涉及一种使用化学机械抛光系统对由铜、钨、钛和/或多晶硅组成的基底进行抛光的方法，该系统包含电化学氧化电位大于 0.2V 的有机磺酸作为氧化剂。
• SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ONIUM SULFONATE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150210829A1

  公开（公告）日：2015-07-30

  A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R 1 a Si(R 2 ) 4−a Formula (1) and compounds of Formula (2): R 3 c Si(R 4 ) 3−c 2 Y b Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.
• US6783913B2
  申请人：——

  公开号：US6783913B2

  公开（公告）日：2004-08-31