6H-Pyrrolo[3,2-b:4,5-bâ²]bis[1,4]benzothiazine (PBBTZ, 1) and its two 6-substituted derivatives (2 and 3) were conveniently synthesized. Their optical properties were studied by UV-vis and fluorescence spectroscopy, and electrochemical properties were investigated by cyclic voltammetry (CV). Good thermal stability was observed by thermogravimetric analysis. X-Ray analysis revealed a coplanar structure and a column stacking in the single crystal of compound 1. OFET measurements showed that 1â3 were p-type semiconductors. The performance of these devices displayed good reproducibility at ambient conditions. When devices containing 1 were fabricated on OTS-treated SiO2/Si substrates at 60 °C, the best performance was achieved with the average hole mobility as high as 0.34 cm2Vâ1 sâ1 and the on/off ratio about 106â107. This performance resulted from the well-ordered molecular packing as revealed by XRD and AFM analysis.
6H-Pyrrolo[3,2-b:4,5-bâ²]bis[1,4]benzothiazine (P
BBTZ, 1) 及其两种 6 取代衍
生物(2 和 3)被方便地合成出来。它们的光学性质通过紫外-可见光谱和荧光光谱进行了研究,电
化学性质通过循环伏安法(CV)进行了研究。热重分析表明它们具有良好的热稳定性。X 射线分析表明,化合物 1 的单晶体具有共面结构和柱状堆叠。在环境条件下,这些器件的性能具有良好的再现性。在 60 °C 的温度下,在经过 O
TS 处理的
二氧化硅/
硅衬底上制造含有化合物 1 的器件时,性能达到最佳,平均空穴迁移率高达 0.34 cm2Vâ1 sâ1 ,导通/截止比约为 106â107。XRD 和原子力显微镜分析表明,这种性能得益于有序的分子堆积。