ORGANIC ELECTROLUMINESCENT DEVICE, AN AZEPINE COMPOUND, AND A METHOD FOR MAKING THE SAME
申请人:OGASAWARA Jun
公开号:US20090001880A1
公开(公告)日:2009-01-01
An organic electroluminescent device having a pair of electrodes, and at least one organic layer interposed between the pair of electrodes, with the organic layer containing at least one compound represented by formula (1):
wherein L
11
, L
13
, and L
14
each independently represent an o-arylene group, an o-heteroarylene group, or a vinylene group; L
12
represents an o-arylene group, an o-heteroarylene group, a vinylene group, or an ethylene group; and L
15
represents a trivalent or higher aromatic ring or a trivalent or higher aromatic heterocyclic ring; and
a compound represented by formula (2):
wherein L
21
, L
22
, L
23
, L
24
, and L
25
each independently represent a group necessary for forming an aromatic ring or a group necessary for forming an aromatic heterocyclic ring; and
a method for producing a compound represented by formula (2).
n-TYPE SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING n-TYPE SEMICONDUCTOR ELEMENT, WIRELESS COMMUNICATION DEVICE, AND MERCHANDISE TAG
申请人:Toray Industries, Inc.
公开号:US20220185951A1
公开(公告)日:2022-06-16
An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability, where the n-type semiconductor element includes a second insulating layer, where the second insulating layer contains: A. (a) a compound having one carbon-carbon double bond or one conjugated system bound to at least one group represented by general formula (1) and at least one group represented by general formula (2); and (b) a polymer; or B. a polymer having, in its molecular structure, the remaining group after removing some hydrogen atoms from R
1
, R
2
, R
3
, or R
4
in the compound (a), or the remaining group after removing some hydrogen atoms from the carbon-carbon double bond or the conjugated system in the compound (a).
n-TYPE SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING n-TYPE SEMICONDUCTOR ELEMENT, WIRELESS COMMUNICATION DEVICE, AND PRODUCT TAG
申请人:Toray Industries, Inc.
公开号:US20220158098A1
公开(公告)日:2022-05-19
An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.