tris(N,N-ethylbutyldithiocarbamato)indium(III) | 878385-08-1

• 分子结构分类: 有机化合物 - 有机硫化合物
• 英文名称: tris(N,N-ethylbutyldithiocarbamato)indium(III)
• 英文别名: N-butyl-N-ethylcarbamodithioate;indium(3+)
• CAS: 878385-08-1
• 化学式: C₂₁H₄₂InN₃S₆
• 分子量: 643.801
• InChiKey: NSIJLQPNHJFKQK-UHFFFAOYSA-K

计算性质

• 辛醇/水分配系数(LogP)：
  7.39
• 重原子数：
  31
• 可旋转键数：
  18
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  182
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  tris(N,N-ethylbutyldithiocarbamato)indium(III) 以 gas 为溶剂， 生成 indium sulfide
  参考文献：
  名称：

  Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

  摘要：

  Copper indium disulfide (CuInS2; CIS) films were deposited on various substrates by two-stage metal-organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cu- and In/S-containing precursors without toxic H2S gas: first, a pure Cu thin film was prepared on glass or indium/tin oxide glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) or bis(ethylisobutyrylacetato)copper(II); second, on the resulting Cu film, tris(N,N-ethylbutyldithiocarbamato)indium(III) was treated to produce CIS films by a MOCVD method at 430 degrees C. In this process, their thicknesses and stoichiometries were found to be elaborately controlled on demand by adjusting the process conditions. The optical band gap of the stoichiometric CIS film was about 1.41 eV, which is in the near-optimal range for harvesting solar radiation energy.

  DOI：

  10.1021/ic061445c
• 作为产物：
  描述：

  二硫化碳 、 N-乙基正丁胺 、 氯化铟 在 sodium hydroxide 作用下， 以 甲醇 为溶剂， 以89%的产率得到tris(N,N-ethylbutyldithiocarbamato)indium(III)
  参考文献：
  名称：

  Deposition of CuInS₂ Thin Films Using Copper- and Indium/Sulfide-Containing Precursors through a Two-Stage MOCVD Method

  摘要：

  Copper indium disulfide (CuInS2; CIS) films were deposited on various substrates by two-stage metal-organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cu- and In/S-containing precursors without toxic H2S gas: first, a pure Cu thin film was prepared on glass or indium/tin oxide glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) or bis(ethylisobutyrylacetato)copper(II); second, on the resulting Cu film, tris(N,N-ethylbutyldithiocarbamato)indium(III) was treated to produce CIS films by a MOCVD method at 430 degrees C. In this process, their thicknesses and stoichiometries were found to be elaborately controlled on demand by adjusting the process conditions. The optical band gap of the stoichiometric CIS film was about 1.41 eV, which is in the near-optimal range for harvesting solar radiation energy.

  DOI：

  10.1021/ic061445c