d-TESADT | 1312341-02-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: d-TESADT
• CAS: 1312341-02-8
• 化学式: C₃₄H₃₈S₂Si₂
• 分子量: 596.741
• InChiKey: NYBWUHOMYZZKOR-IQRXAWHISA-N

反应信息

• 作为产物：
  描述：

  在 盐酸 、 tin(II) chloride dihydrate 作用下， 以 四氢呋喃 、 正己烷 、 水 为溶剂， 反应 0.5h， 以150 mg的产率得到d-TESADT
  参考文献：
  名称：

  Zone-Refinement Effect in Small Molecule−Polymer Blend Semiconductors for Organic Thin-Film Transistors

  摘要：

  The blend films of small-molecule semiconductors with insulating polymers exhibit not only excellent solution processability but also superior performance characteristics in organic thin-film transistors (OTFTs) over those of neat small-molecule semiconductors. To understand the underlying mechanism, we studied triethylsilylethynyl anthradithiophene (TESADT) with small amounts of impurity formed by weak UV exposure. OTFTs with neat impure TESADT had drastically reduced field-effect mobility (<10(-5) CM2/(V/s)), and a disappearance of the high-temperature crystal phase was observed for neat impure TESADT. However, the mobility of the blend films of the UV-exposed TESADT with poly(alpha-methylstyrene) (P alpha MS) is recovered to that of a fresh TESADT-P alpha MS blend (0.040 cm(2)/(V/s)), and the phase transition characteristics partly return to those of fresh TESADT films. These results are corroborated by OTFT results on "aged" TIPS-pentacene. These observations, coupled with the results of neutron reflectivity study, indicate that the formation of a vertically phase-separated layer of crystalline small-molecule semiconductors allows the impurity species to remain preferentially in the adjacent polymer-rich layer. Such a "zone-refinement effect" in blend semiconductors effectively removes the impurity species that are detrimental to organic electronic devices from the critical charge-transporting interface region.

  DOI：

  10.1021/ja108772q