申请人:BASF SE
公开号:US11505562B2
公开(公告)日:2022-11-22
Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state
where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 1, 2 or 3, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group,
wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.
本文描述了一种制备含无机金属薄膜的工艺,包括使固体基底与气态通式 (I) 或 (II) 的化合物接触
其中 A 是 NR2 或 OR,R 是烷基、烯基、芳基或硅烷基、
E 是 NR 或 O
n 是 1、2 或 3,以及
R′ 是氢、烷基、烯基、芳基或硅烷基、
其中,如果 n 为 2 且 E 为 NR 或 A 为 OR,则 NR 或 OR 中至少有一个 R 在 1 位上不含氢原子。