制备了通过有机硅核连接具有三个或四个低聚噻吩单元的星形化合物,并研究了它们的空穴传输能力。具有气相沉积膜的顶接触型薄膜晶体管(TFT)三[(乙基叔硫苯基)二甲基甲硅烷基]甲基硅烷(3T 3的Si 4)显示的场效应迁移率(μ FET的4.4×10)-5厘米2 V -1s -1,而带有碳心类似物的设备三[(乙基叔硫苯基)二甲基甲硅烷基]甲烷(3T 3 Si 3 C)没有显示TFT活性。通过时间分辨微波电导率测量确定3T 3 Si 4和3T 3 Si 3 C的固有分子内空穴迁移率分别为8×10 -2和2×10 -2 cm 2 V -1s -1分别是由3T 3 Si 4中较高的σ-π相互作用度引起的。要了解有关有机硅核心结构对分子间空穴迁移率的影响的更多信息,我们计算了在(U)B3LYP / 6-311 + G(d,p)//(U)B3LYP / 6处空穴转移的内部重组能-31G(d)能级,表明硅衍
Applications of Silicon-Bridged Oligothiophenes to Organic FET Materials
摘要:
Trisilanylene-bridged oligothiophenes were synthesized, and their vapor-deposited and spin-coated films were examined as p-type semiconductors in field-effect transistors (FET). Of these, the best FET performance was achieved by using tris[(ethylquinquethiophenyl)dimethylsilyl]methylsilane as the active material, whose field-effect mobility and on/off ratio were determined to be 6.4 x 10(-2) cm(2) V-1 s(-1) and 10(4), respectively. Interestingly, the trisilanylene-bridged oligothiophenes were found to be photoactive and the FET activity of the films was suppressed, when irradiated in air (254 nm), being potentially usable as patternable FET materials.